Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Hsiu-Chih Chen"'
Autor:
Guo-Wei Huang, Fu-Kuo Hsueh, Kun-Ming Chen, Bo-Yuan Chen, Chun Chi Chen, Chia-Sung Chiu, Hsiu-Chih Chen, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4225-4231
Analog and RF characteristics of power FinFET transistors with different drain-extension structures are investigated for microwave integrated circuit applications. The power FinFETs were designed based on the drain-extended MOSFET structure and fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c431574aac5469b02c26be509574e1
https://doi.org/10.1109/ted.2018.2863748
https://doi.org/10.1109/ted.2018.2863748
Autor:
Ming-Hsuan Kao, Kun-Ming Chen, Yen-Cheng Chiu, Meng-Fan Chang, Kai-Shin Li, Guo-Wei Huang, Cheng-Xin Xue, Jia-Min Shieh, Bo-Yuan Chen, Chun-Ying Lee, Fu-Kuo Hsueh, Chien-Ting Wu, Chang-Hong Shen, Hsiu-Chih Chen, Wen-Hsien Huang, Kun-Lin Lin, Wen-Kuan Yeh, Chenming Hu
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
For the first time, below 400°C-fabricated gate-all-around (GAA) transistor fabrication process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers are plasma-assisted atomic layer etching (PA-ALE), plasma immersion ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a944a506da13ea96981ba27b339bb43
https://doi.org/10.1109/iedm19573.2019.8993628
https://doi.org/10.1109/iedm19573.2019.8993628
Autor:
Chih-Chao Yang, Peng Chen, Kai-Shin Li, Wen-Kuan Yeh, Hsiu-Chih Chen, Guo-Wei Huang, Jia-Min Shieh, Kun-Ming Chen, Wei-Hao Chen, Meng-Fan Chang, Srivatsa Srinivasa, Bo-Yuan Chen, Yung-Ning Tu, Chun-Ying Lee, Wen-Hsien Huang, Fu-Kuo Hsueh, Vijaykrishnan Narayanan, Chang-Hong Shen
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D+-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO 2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510b463b8c7721e7866f277640cf74ae
https://doi.org/10.1109/iedm.2018.8614697
https://doi.org/10.1109/iedm.2018.8614697
Autor:
Wen-Kuan Yeh, Min-Hung Lee, Pin-Guang Chen, Kai-Shin Li, Fu-Kuo Hsueh, Chun-Chi Chen, Yun-Jie Wei, Chenming Hu, Sayeef Salahuddin, Jia-Min Shieh, Tung-Yan Lai, Yi-Ju Chen, Hsiu-Chih Chen, Wen-Cheng Chiu, Yu-Fan Chiu, Bo-Wei Wu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9bed21def660b31e91bfbf9878e0fc
https://doi.org/10.1109/iedm.2018.8614521
https://doi.org/10.1109/iedm.2018.8614521
Autor:
Wei-Hao Chen, Tung-Ying Hsieh, Bo-Yuan Chen, Fu-Kuo Hsueh, Jia-Min Shieh, Meng-Fan Chang, Hsiu-Chih Chen, Wen-Hsien Huang, Chih-Chao Yang, Hsiao-Yun Chiu, Kai-Shin Li, Chang-Hong Shen, K. C. Hsu, Wen-Kuan Yeh
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
We report heterogeneously integrated sub-40nm epi-like monolithic 3DIC with vertical ReRAM and memory computing (NMC) circuit. High driving current multi-channel UTB-MOSFETs (3.3/1.4 mA$/\mu \mathrm {m}$ for N/P FETs) was realized by low thermal budg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd97ffe9731e7493ad02695afa71d908
https://doi.org/10.1109/s3s.2018.8640186
https://doi.org/10.1109/s3s.2018.8640186
Autor:
Guo-Wei Huang, Kun-Ming Chen, Meng-Fan Chang, Srivatsa Srinivasa, Wen-Hsien Huang, Vijaykrishnan Narayanan, Kang-Lung Wang, K. C. Hsu, Bo-Yuan Chen, Fu-Kuo Hsueh, Jia-Min Shieh, Ying-Tsan Tang, Chang-Hong Shen, Wei-Hao Chen, Hochul Lee, Nicholas Jao, Chih-Chao Yang, Hsiu-Chih Chen, Albert Lee, Hsiao-Yun Chiu, Wen-Kuan Yeh
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D CIM SRAM cell is able to compute NAND/AND, OR/NOR and XOR/XNOR operations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2919c26e36adb8de8e0ff52d85002970
https://doi.org/10.1109/iedm.2017.8268380
https://doi.org/10.1109/iedm.2017.8268380
Autor:
Tien-Sheng Chao, Michael I. Current, Hsiu-Chih Chen, Fu-Liang Yang, Chenming Hu, Shang-Shiun Chuang, Po-Jung Sung, Yu-Lun Lu, Yao-Jen Lee, Tseung-Yuen Tseng, Fu-Kuo Hsueh, Ta-Chun Cho
Publikováno v:
IEEE Transactions on Electron Devices. 61:651-665
Microwave annealing (MWA) and rapid thermal annealing (RTA) of dopants in implanted Si are compared in their abilities to produce very shallow and highly activated junctions. First, arsenic (As), phosphorus (P), and BF2 implants in Si substrate were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaebccfaa9cff8602da6c5884d7ad5a7
https://doi.org/10.1109/ted.2014.2300898
https://doi.org/10.1109/ted.2014.2300898
Autor:
Wen-Kuan Yeh, Wen-Hsien Huang, Kai-Shin Li, Chang-Hsien Lin, Guo-Wei Huang, Oi-Ying Wong, Po-Hung Chen, Jia-Min Shieh, Bo-Yuan Chen, Fu-Kuo Hsueh, Hsing-Hsiang Wang, Hsiu-Chih Chen, Chih-Chao Yang, Tung-Ying Hsieh, Yu-Shao Shiao, Chang-Hong Shen
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf34362b7abb11ed48173c6007d55cd0
https://doi.org/10.1109/iedm.2016.7838030
https://doi.org/10.1109/iedm.2016.7838030
Autor:
Chuang Ju Lin, Bo Yuan Chen, Jia-Min Shieh, Fu-Kuo Hsueh, Hsiu Chih Chen, Chang Hong Shen, Yu Shao Jerry Shiao, Guo-Wei Huang, Kun-Ming Chen, Edward Yi Chang
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBJ05
In this paper, we present the dc and high-frequency characteristics of trigate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for RF applications. Trigate TFTs were fabricated using a 3D-IC process and designed with a multi-finger gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277146ec16bda6d8d54f6131f13e8d17
https://doi.org/10.7567/1347-4065/ab02e1
https://doi.org/10.7567/1347-4065/ab02e1
Autor:
Po-Cheng Chen, Yiming Li, K.-P. Huang, Yao-Jen Lee, Wen-Kuan Yeh, Wen-Hsien Huang, Wen-Fa Wu, Yao-Ming Huang, Guo-Wei Huang, Kun-Lin Lin, Kuo-Hsing Kao, Bo-Yuan Chen, Fu-Kuo Hsueh, Chien-Ting Wu, Chang-Hong Shen, Ta-Chun Cho, Yi-Ju Chen, Fu-Ju Hou, Yun-Fang Hou, Tien-Sheng Chao, Po-Jung Sung, Min-Cheng Chen, Shu-Han Hsu, Chih-Chao Yang, Hsiu-Chih Chen, Michael I. Current, Jia-Min Shieh, Seiji Samukawa
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4aac8ca01b008b7008be57e207cb60
https://doi.org/10.1109/iedm.2015.7409638
https://doi.org/10.1109/iedm.2015.7409638