Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hsing-Yi Liang"'
Publikováno v:
IEEE Transactions on Neural Systems and Rehabilitation Engineering, Vol 31, Pp 4106-4114 (2023)
Patients with Parkinson’s disease (PD) may develop cognitive symptoms of impulse control disorders (ICDs) when chronically treated with dopamine agonist (DA) therapy for motor deficits. Motor and cognitive comorbidities critically increase the disa
Externí odkaz:
https://doaj.org/article/14ae2de1806b46f096db3bfd1221f527
Autor:
Yuan-Pin Lin, Hsing-Yi Liang, Yueh-Sheng Chen, Cheng-Hsien Lu, Yih-Ru Wu, Yung-Yee Chang, Wei-Che Lin
Publikováno v:
Journal of NeuroEngineering and Rehabilitation, Vol 18, Iss 1, Pp 1-12 (2021)
Abstract Background Patients with Parkinson’s disease (PD) can develop impulse control disorders (ICDs) while undergoing a pharmacological treatment for motor control dysfunctions with a dopamine agonist (DA). Conventional clinical interviews or qu
Externí odkaz:
https://doaj.org/article/3a24dac9252a492f9fbad296250607a6
Autor:
Hsing-Yi Liang, Wei-Che Lin, Yuan-Pin Lin, Cheng-Hsien Lu, Yueh-Sheng Chen, Yung-Yee Chang, Yih-Ru Wu
Publikováno v:
Journal of NeuroEngineering and Rehabilitation, Vol 18, Iss 1, Pp 1-12 (2021)
Journal of NeuroEngineering and Rehabilitation
Journal of NeuroEngineering and Rehabilitation
Background Patients with Parkinson’s disease (PD) can develop impulse control disorders (ICDs) while undergoing a pharmacological treatment for motor control dysfunctions with a dopamine agonist (DA). Conventional clinical interviews or questionnai
Autor:
Yueh-Sheng Chen, Yung-Yee Chang, Yih-Ru Wu, Yuan-Pin Lin, Wei-Che Lin, Hsing-Yi Liang, Cheng-Hsien Lu
BackgroundPatients with Parkinson’s disease (PD) can develop the cognitive adverse effect of impulse control disorders (ICDs) while undergoing a pharmacological treatment for motor control dysfunctions with a dopamine agonist (DA). Conventional cli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f292459e939a6260a59646b49b46f4
https://doi.org/10.21203/rs.3.rs-125029/v1
https://doi.org/10.21203/rs.3.rs-125029/v1
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel
Autor:
Hsing-Yi Liang, 梁馨宜
95
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size and controls the position of grain boundaries effectively. However, thin-film transistors made by SLS suffer reliability issues po
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size and controls the position of grain boundaries effectively. However, thin-film transistors made by SLS suffer reliability issues po
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55435106310280633596
Publikováno v:
Applied Physics Letters. 90:183502
This study characterizes the stress-induced subthreshold degradation effect in low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) formed using sequential lateral solidified (SLS) crystallization on a glass substrate. The SLS pr
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p682-683, 2p
Autor:
Lin, Yuan-Pin1,2 (AUTHOR), Liang, Hsing-Yi1 (AUTHOR), Chen, Yueh-Sheng3 (AUTHOR), Lu, Cheng-Hsien4 (AUTHOR), Wu, Yih-Ru5 (AUTHOR), Chang, Yung-Yee4 (AUTHOR), Lin, Wei-Che3,6 (AUTHOR) alex@cgmh.org.tw
Publikováno v:
Journal of NeuroEngineering & Rehabilitation (JNER). 7/2/2021, Vol. 18 Issue 1, p1-12. 12p.
Publikováno v:
Mental Health Weekly Digest; 11/17/2023, p534-534, 1p