Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Hsing-Hui Hsu"'
Autor:
Hsing-hui Hsu, 許杏惠
98
In the last years of Ming Dynasty while Buddhism went from bad to worse, Buddhist Master Lien-chi took up the responsibility of the continuation and the revival of Buddhism by turning the development of Chinese Buddhism to a direction with in
In the last years of Ming Dynasty while Buddhism went from bad to worse, Buddhist Master Lien-chi took up the responsibility of the continuation and the revival of Buddhism by turning the development of Chinese Buddhism to a direction with in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/28713120172891883175
Autor:
Hsing-Hui Hsu, 徐行徽
96
In this thesis, a poly-Si nanowire TFT device with multiple-gated configuration was fabricated by utilizing a simple and low-cost spacer etching technique. With the aid of strong coupling effect between the inverse-T gate and the top gate due
In this thesis, a poly-Si nanowire TFT device with multiple-gated configuration was fabricated by utilizing a simple and low-cost spacer etching technique. With the aid of strong coupling effect between the inverse-T gate and the top gate due
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/79790152797284412519
Publikováno v:
IEEE Transactions on Electron Devices. 58:1879-1885
Trap-layer-engineered poly-Si nanowire silicon-oxide-nitride-oxide-silicon (SONOS) devices with a gate-all-around (GAA) configuration were fabricated and characterized. For the first time, a clever method has been developed to flexibly incorporate Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f12bc5bf83c3436aee0d0918c79b09c5
https://doi.org/10.1109/ted.2011.2140321
https://doi.org/10.1109/ted.2011.2140321
Publikováno v:
IEEE Transactions on Electron Devices. 58:641-649
In this paper, we have proposed a simple and novel way to fabricate poly-Si nanowire (NW)-silicon-oxide-nitride-oxide-silicon (SONOS) devices with various gate configurations. Three types of devices having various gate configurations, such as side ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c7b6dbc4978ecbee15cb0835bed68c
https://doi.org/10.1109/ted.2010.2098033
https://doi.org/10.1109/ted.2010.2098033
Publikováno v:
IEEE Transactions on Nanotechnology. 9:386-391
A new method is proposed and demonstrated to fabricate planar thin-film transistors and trigated nanowire (NW) devices simultaneously on the same panel. By using an oxide-nitride-oxide stack as the gate dielectric, the NW devices could also serve as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b2db67abc84b55d20bf650c21e363d
https://doi.org/10.1109/tnano.2009.2029573
https://doi.org/10.1109/tnano.2009.2029573
Publikováno v:
IEEE Transactions on Electron Devices. 57:905-912
In this paper, we characterize and compare the characteristics of a poly-Si nanowire (NW) device with independent double-gated configuration under different operation modes. In the device, the tiny NW channels are surrounded by an inverted-T-shaped g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc7fae40b1129c299adf7a20efb8909
https://doi.org/10.1109/ted.2010.2041857
https://doi.org/10.1109/ted.2010.2041857
Publikováno v:
IEEE Transactions on Electron Devices. 55:3063-3069
Several types of poly-Si nanowire (NW) thin-film transistors (TFTs) with multiple-gated (MG) configuration were demonstrated and characterized. These devices were fabricated with simple methods without resorting to costly lithographic tools and proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa2c7a01db5e8be49a1aa0c6ad55216
https://doi.org/10.1109/ted.2008.2005161
https://doi.org/10.1109/ted.2008.2005161
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
For the past years, MEMS-based devices such as Suspended Gate Metal-Oxide-Semiconductor Field-Effect Transistor (sg-mosfet) [1] and air-gap poly Si Thin-Film Transistors (TFTs) [2] have received considerable attention because of their abrupt switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c4f34146341ce8912027e9f33ec9bd
https://doi.org/10.1109/vtsa.2011.5872216
https://doi.org/10.1109/vtsa.2011.5872216
Publikováno v:
NEMS
In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time-controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2974d042a054f7e5aced4691a79ee0b0
https://doi.org/10.1109/nems.2011.6017356
https://doi.org/10.1109/nems.2011.6017356
Publikováno v:
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.
Charge-trapping SONOS devices featuring nanowire (NW) and independent double-gated (IDG) structure are fabricated and characterized. The mechanism leading to DG output current performance enhancement is investigated. Taking advantage of the separated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98add10691d784d615dd4067ce1feda7
https://doi.org/10.1109/vtsa.2010.5488911
https://doi.org/10.1109/vtsa.2010.5488911