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Autor:
Hsing-Chien Wang, 王興建
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Barium strontium titanate (Ba,Sr)TiO3 (BST) thin films are being widely investigated as alternative dielectrics for ultra large scale integrated circuits (ULSIs) DRAM storage capacitors due to its high dielectric constant, low leakage current
Barium strontium titanate (Ba,Sr)TiO3 (BST) thin films are being widely investigated as alternative dielectrics for ultra large scale integrated circuits (ULSIs) DRAM storage capacitors due to its high dielectric constant, low leakage current
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73948032065796345420