Zobrazeno 1 - 10
of 179
pro vyhledávání: '"Hsing Huang Tseng"'
Autor:
Byoung Hun Lee, Hsing-Huang Tseng, Seung-Ho Hong, Rock-Hyun Baek, Yoon-Ha Jeong, Jae Chul Kim, Chang Yong Kang, Raj Jammy, Kyong Taek Lee, Hyun-Sik Choi, Gennadi Bersuker, Min-Sang Park, Seung-Hyun Song, Gil-Bok Choi, Hyun Chul Sagong
Publikováno v:
Microelectronic Engineering. 88:3411-3414
Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO"2 thicknesses. The distribution of generated traps after HCI and PBTI stress w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a095546fe76011f5b10170f9a88f4b
https://doi.org/10.1016/j.mee.2009.08.002
https://doi.org/10.1016/j.mee.2009.08.002
Autor:
Raj Jammy, Kanghoon Jeon, Prashant Majhi, Hsing-Huang Tseng, Wei-Yip Loh, Jungwoo Oh, Chenming Hu, Chang Yong Kang, Wade Xiong, Tsu Jae King Liu
Publikováno v:
Solid-State Electronics. :22-27
Planar band-to-band tunneling FETs (TFETs) have been fabricated on silicon-on-insulator (SOI) substrates using conventional CMOS technologies with a highly scaled sub-60 nm gate length (effective gate length [ L g ] ∼ 40 nm due to an overlap betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bb29f657a5781cdecde8a7cf6eefa6
https://doi.org/10.1016/j.sse.2011.06.019
https://doi.org/10.1016/j.sse.2011.06.019
Autor:
Domingo Ferrer, B.-G. Min, P. Y. Hung, Gennadi Bersuker, Se-Hoon Lee, Prashant Majhi, J. Oh, Wei-Yip Loh, Jiacheng Huang, R. Harris, Hsing-Huang Tseng, Sanjay K. Banerjee, Paul Kirsch, B. Sassman, R. Jammy
Publikováno v:
IEEE Transactions on Electron Devices. 58:2917-2923
Preserving the integrity (e.g., Ge concentration, strain, and lattice perfection) of pseudomorphically grown silicon germanium (SiGe) heterostructure channels on Si substrates is one of the most critical factors in obtaining optimal pMOSFET performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320ab105c172058dedcb7a515561687b
https://doi.org/10.1109/ted.2011.2159862
https://doi.org/10.1109/ted.2011.2159862
Autor:
J. Price, Gennadi Bersuker, Hsing-Huang Tseng, Onise Sharia, Patrick M. Lenahan, Alexander A. Demkov, P. Lysaght, Jason T. Ryan, Huang-Chun Wen, Kisik Choi, C. Park
Publikováno v:
IEEE Transactions on Electron Devices. 57:2047-2056
The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4042b9d54ac502787b0ba69ec64a5c2
https://doi.org/10.1109/ted.2010.2051863
https://doi.org/10.1109/ted.2010.2051863
Autor:
Muhammad Mustafa Hussain, H. R. Harris, Casey Smith, Hsing-Huang Tseng, Chadwin D. Young, R. Jammy
Publikováno v:
IEEE Transactions on Electron Devices. 57:626-631
Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63901d3b95879fc0df33e6fc2a8c67c2
https://doi.org/10.1109/ted.2009.2039097
https://doi.org/10.1109/ted.2009.2039097
Autor:
Jungwoo Oh, Soon-Yen Jung, Hsing-Huang Tseng, Prashant Majhi, Hi-Deok Lee, R. Jammy, Ga-Won Lee, Shi-Guang Li, Ying-Ying Zhang, Kee-Young Park
Publikováno v:
IEEE Transactions on Nanotechnology. 9:258-263
In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da4d158e8cabb668c9e3355bc8ea392e
https://doi.org/10.1109/tnano.2009.2025129
https://doi.org/10.1109/tnano.2009.2025129
Autor:
Muhammad Mustafa Hussain, Chanro Park, Paul Kirsch, Hsing-Huang Tseng, Prashant Majhi, Gennadi Bersuker, Raj Jammy
Publikováno v:
Microelectronic Engineering. 86:1722-1727
This paper discusses recent progress in and challenges of threshold voltage control for advanced high-k/metal-gated (HKMG) devices. It presents the impact on threshold voltage (V"t) control of incorporating La and Al into HKMG devices. A dipole momen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3b51d4024f527bfe7a6caa119c659b0
https://doi.org/10.1016/j.mee.2009.03.092
https://doi.org/10.1016/j.mee.2009.03.092
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:171-179
In this paper, the reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. The HfON with La demonstrated higher breakdown voltage and lower gate leakage than the control HfON with a similar equivalent oxide thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4050182144edfd54188a7478b308f42
https://doi.org/10.1109/tdmr.2009.2020741
https://doi.org/10.1109/tdmr.2009.2020741
Autor:
Zeynep Celik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka
Publikováno v:
Microelectronics Reliability. 49:103-112
A new unified noise model is presented that accurately predicts the low-frequency noise spectrum exhibited by MOSFETs with high dielectric constant (high- k ), multi-stack gate dielectrics. The proposed multi-stack unified noise (MSUN) model is based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f50d60ad995aa63c3ff93aad30cd20
https://doi.org/10.1016/j.microrel.2008.12.005
https://doi.org/10.1016/j.microrel.2008.12.005
Autor:
Jungwoo Oh, Hsing-Huang Tseng, Jin Suk Wang, Chang Yong Kang, Min Ki Na, B. H. Lee, Hi Deok Lee, Hyuk-Min Kwon, Ook Sang Yoo, In Shik Han, Prashant Majhi, Raj Jammy, Won Ho Choi
Publikováno v:
Materials Science and Engineering: B. :102-105
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO2/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d88b1a6400bdf493f0c2d2129558cb6
https://doi.org/10.1016/j.mseb.2008.06.031
https://doi.org/10.1016/j.mseb.2008.06.031