Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hsin-Tun Wu"'
Autor:
Che-He Lin, Chen-Hsin Lien, Keng-Li Su, Shyh-Shyuan Sheu, Pei-Yi Gu, Kuo-Hsing Cheng, Pei-Chia Chiang, Heng-Yuan Lee, Chia-Chen Kuo, Meng-Fan Chang, Ming-Jinn Tsai, Che-Wei Wu, Ku-Feng Lin, Yih-Shan Yang, Frederick T. Chen, Sum-Min Wang, Tzu-Kun Ku, Hsin-Tun Wu, Ming-Jer Kao, Wen-Pin Lin, Pi-Feng Chiu, Yu-Sheng Chen
Publikováno v:
ISSCC
Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1–3], MRAM [4–5], and resistive RAM (RRAM) [6–8] have achieved faster operating speeds than embedded Flash. Among those emerging NVMs, RRAM has advantages in faste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceab8f31a3c0195e9eec1b5702d6eca1
https://doi.org/10.1109/isscc.2011.5746281
https://doi.org/10.1109/isscc.2011.5746281
Autor:
Shyh-Shyuan Sheu, Meng-Fan Chang, Ku-Feng Lin, Che-Wei Wu, Yu-Sheng Chen, Pi-Feng Chiu, Chia-Chen Kuo, Yih-Shan Yang, Pei-Chia Chiang, Wen-Pin Lin, Che-He Lin, Heng-Yuan Lee, Pei-Yi Gu, Sum-Min Wang, Chen, F.T., Keng-Li Su, Chen-Hsin Lien, Kuo-Hsing Cheng, Hsin-Tun Wu, Tzu-Kun Ku
Publikováno v:
2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p200-202, 3p