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pro vyhledávání: '"Hsin-Tsun Wu"'
Autor:
Fang-Ming Chen, Yao-Jen Chang, Shan-Yi Yang, Shyh-Shyuan Sheu, Yi-Hui Su, Hsin-Tsun Wu, Yu-Chen Hsin, Guan-Long Chen, SK Ziaur Rahaman, I-Jung Wang, Kuan-Ming Chen, Denny Duan-Lee Tang, Hsu-Ming Hsiao, Sih-Han Li, Jeng-Hua Wei, Po-Shao Yeh, Chih-I Wu, H. Y. Lee
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We’d built 8kb spin-orbit-torque (SOT) MRAM chips to evaluate our cell design and the process recipes to integrate them on CMOS wafer. For the SOT cell, the switching threshold is well correlated to the tungsten channel resistivity. We will show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449d57f227b2ef9bdcc9633b39daf668
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
https://doi.org/10.1109/vlsi-tsa51926.2021.9440096
