Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hsin-Ping CHOU"'
Autor:
Hsin-Ping CHOU, Stone CHENG
Publikováno v:
Journal of Thermal Science and Technology, Vol 12, Iss 2, Pp JTST0022-JTST0022 (2017)
This study investigated the heat generation behavior of normally-on GaN FET consisting of multi-chip AlGaN/GaN high electron mobility transistors (HEMTs) cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD) in a new desig
Externí odkaz:
https://doaj.org/article/837f22705443435797f05ec0731370b3
Publikováno v:
Advanced Concepts for Intelligent Vision Systems ISBN: 9783030406042
ACIVS
ACIVS
When coping with person identification problem, previous approaches either directly take raw RGB as inputs or use more sophisticated devices to capture other information. However, most of the approaches are sensitive to the changes of environment and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33bc8dd8ba4ced4dcd1538b35bc214e8
https://doi.org/10.1007/978-3-030-40605-9_18
https://doi.org/10.1007/978-3-030-40605-9_18
Publikováno v:
Materials Science in Semiconductor Processing. 41:304-311
This study investigates the heat generation behavior of packaged normally-on multi-finger AlGaN/GaN high electron mobility transistors (HEMTs) that are cascoded with a low-voltage MOSFET (LVMOS) and a SiC Schottky barrier diode (SBD). By foremost car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed25c2cc0417287fdeb1c9f72febe87
https://doi.org/10.1016/j.mssp.2015.09.023
https://doi.org/10.1016/j.mssp.2015.09.023
Publikováno v:
The Proceedings of the 2nd International Conference on Industrial Application Engineering 2015.
This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fa8eb438d81f66d17ac5174bae22820
https://doi.org/10.12792/iciae2015.089
https://doi.org/10.12792/iciae2015.089
Autor:
Stone Cheng, Hsin Ping Chou
Publikováno v:
Journal of Thermal Science and Technology. 12:JTST0022-JTST0022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f46f05b6980ceb7bc167fe10d8cee2
https://doi.org/10.1299/jtst.2017jtst0022
https://doi.org/10.1299/jtst.2017jtst0022
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
AlGaN/GaN high electron mobility transistors (HEMTs) are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap (3.4eV), high breakdown voltage, large critical electric field, high ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d048470d3d8247678447ff1267a0ef5c
https://doi.org/10.1109/ispsd.2013.6694406
https://doi.org/10.1109/ispsd.2013.6694406
Publikováno v:
2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS).
This work presents thermal resistance constitution evaluation and electrical experiments for AlGaN/GaN HEMTs packaging device. The investigation of thermal resistance is based on the closed-form expression heat transfer model. Actual multi-fingers st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c89ba63600aad714ae377bfce7d8409e
https://doi.org/10.1109/peds.2013.6527073
https://doi.org/10.1109/peds.2013.6527073
Publikováno v:
2012 IEEE 13th Workshop on Control and Modeling for Power Electronics (COMPEL).
This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75352372d22ea40e3b7576f1ab594e5a
https://doi.org/10.1109/compel.2012.6251752
https://doi.org/10.1109/compel.2012.6251752
Publikováno v:
2012 IEEE 13th Workshop on Control & Modeling for Power Electronics (COMPEL); 1/ 1/2012, p1-5, 5p