Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hsin-Lu Chen"'
Autor:
Hsin-Lu Chen, 陳信儒
107
A novel, non-destructively, low-temperature and high pressure super critical fluid (SCF) passivation treatment is employed to improve the performance of electron device. Three kinds of rising electron devices were used to demonstrated the pa
A novel, non-destructively, low-temperature and high pressure super critical fluid (SCF) passivation treatment is employed to improve the performance of electron device. Three kinds of rising electron devices were used to demonstrated the pa
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/wdayvu
Autor:
Yu-Ting Su, Hsin-Lu Chen, Ting-Chang Chang, Chih-Cheng Yang, Chi-Fong Ai, Po-Hsun Chen, Chun-Chu Lin, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chuan Wang, Tai-Fa Young, Min-Chen Chen
Publikováno v:
IEEE Electron Device Letters. 38:1401-1404
A low temperature, non-destructive treatment technique with supercritical carbon dioxide mixing water was demonstrated on thin film type photovoltaic devices to enhance current output. Assembled P-I-N amorphous Si-based devices were treated in a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c880a4c9238d8a3d1c58b2b565feec1
https://doi.org/10.1109/led.2017.2747096
https://doi.org/10.1109/led.2017.2747096
Autor:
Yu-Ho Lin, Li-Hui Chen, Hsiao-Cheng Chiang, Hsueh-Hsing Lu, Yu-Ju Hung, Kuan-Chang Chang, Wan-Ching Su, Ting-Chang Chang, Jianwen Yang, Hung Wei Li, Ann-Kuo Chu, Hsin-Lu Chen, Bo-Wei Chen, Chih-Hung Tsai, Shin-Ping Huang, Tai-Fa Young, Po-Yung Liao, Yu-Ching Tsao, Yu-Zhe Zheng
Publikováno v:
IEEE Transactions on Electron Devices. 64:3167-3173
This paper systematically studies high-current-induced effects, hot-carrier effects, and self-heating effects in flexible low-temperature polycrystalline-silicon thin-film transistors fabricated on polyimide. By utilizing ${I}$ – ${V}$ and various-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7052395bfd02998c851ee7d6fb663531
https://doi.org/10.1109/ted.2017.2715500
https://doi.org/10.1109/ted.2017.2715500
Autor:
Jiun-Chiu Lin, Chih-Cheng Yang, Kuan-Chang Chang, Yu-Shuo Lin, Po-Hsun Chen, Chih-Cheng Shih, Tsung-Ming Tsai, Yu-Ting Su, Hsin-Lu Chen, Wen-Chung Chen
Publikováno v:
IEEE Electron Device Letters. 38:453-456
This letter investigates the influence of ammonia on amorphous carbon resistance random access memory by sputtering the carbon target with argon and ammonia mixed gas. The device fabricated with ammonia (C (NH3)-RRAM) showed remarkable improvement in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3455e95c21c1376323d9b8fb52e81ba
https://doi.org/10.1109/led.2017.2668463
https://doi.org/10.1109/led.2017.2668463
Autor:
Wei Zhang, Ying Hu, Tian-Jian Chu, Min-Chen Chen, Jin-Cheng Zheng, Hui-Chun Huang, Hsin-Lu Chen, Simon M. Sze, Wan-Ching Su, Ya-Chi Hung, Tsung-Ming Tsai, Yu-Ting Su, Ting-Chang Chang, Kuan-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 36:772-774
The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc $I$ – $V$ cycles or the ac pulse progr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10effe393f1544b2b448874847a5f14
https://doi.org/10.1109/led.2015.2448756
https://doi.org/10.1109/led.2015.2448756
Autor:
Ya-Chi Hung, Tsung-Ming Tsai, Kuan-Chang Chang, Yu-Ting Su, Ting-Chang Chang, Hua-Ching Lin, Rui Zhang, Yong-En Syu, Simon M. Sze, Hsin-Lu Chen, Wei Zhang, Min-Chen Chen, Jin-Cheng Zheng, Ying Hu
Publikováno v:
IEEE Electron Device Letters. 36:552-554
In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b347284fdf7d07664683629143aacfd
https://doi.org/10.1109/led.2015.2424996
https://doi.org/10.1109/led.2015.2424996
Autor:
Jin-Cheng Zheng, Jen-Chung Lou, Kai-Huang Chen, Simon M. Sze, Yi-Jiun Chen, Kuan-Chang Chang, Tai-Fa Young, Jung-Hui Chen, Rui Zhang, Jian-Fa Ciou, Tsung-Ming Tsai, Hsin-Lu Chen, Ting-Chang Chang, Tian-Jian Chu
Publikováno v:
IEEE Electron Device Letters. 35:1016-1018
In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory (RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to investigate the resistance switching mechanism of DLC-based memristors. The RRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1cfc726e748c45436a8f4f41750452
https://doi.org/10.1109/led.2014.2343331
https://doi.org/10.1109/led.2014.2343331
Autor:
Chih-Cheng Shih, Simon M. Sze, Jen-Chung Lou, Jung-Hui Chen, Tai-Fa Young, Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Kai-Huang Chen, Hsin-Lu Chen, Syuan-Yong Huang, Ding-Hua Bao, Rui Zhang, Kuan-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 35:633-635
Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e20b6debc9ed6e8b70444ba40553d7
https://doi.org/10.1109/led.2014.2316673
https://doi.org/10.1109/led.2014.2316673
Autor:
Shu-Ping Liang, Kai-Huang Chen, Simon M. Sze, Jen-Chung Lou, Kuan-Chang Chang, Wen-Jen Chen, Min-Chen Chen, Syuan-Yong Huang, Hsin-Lu Chen, Ting-Chang Chang, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Tsung-Ming Tsai, Tai-Fa Young
Publikováno v:
IEEE Electron Device Letters. 35:630-632
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide $({\rm Gd}{:}{\rm SiO}_{2})$ resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5658fd2eaea366a5fa381c09b84730b
https://doi.org/10.1109/led.2014.2316806
https://doi.org/10.1109/led.2014.2316806
Autor:
Kuan-Chang Chang, Hsin-Lu Chen, Simon M. Sze, Yao-Feng Chang, Yong-En Syu, Min-Chen Chen, Tian-Jian Chu, Ya-Chi Hung, Tsung-Ming Tsai, Ting-Chang Chang, Chih-Hung Pan, Rui Zhang, Jin-Cheng Zheng, Chih-Cheng Shih
Publikováno v:
Nanoscale Research Letters
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de4b2e0cb343b0d558b203cc49472825
https://doi.org/10.1186/s11671-015-0740-7
https://doi.org/10.1186/s11671-015-0740-7