Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hsin-Jyun Lin"'
Autor:
Kai-Chieh Chang, Masaru Yano, Yung-Yueh Chiu, Hsin-Chiao Li, Toshiaki Takeshita, Hung-Te-En Tsai, Riichiro Shirota, Hsin-Jyun Lin, Po-Jui Lin
Publikováno v:
IEEE Transactions on Electron Devices. 67:4897-4903
This study comprehensively investigates the impact of the time interval ( ${t}_{\text {wait}}$ ) between program/erase (P/E) cycles on the oxide quality of NAND Flash memory devices. It is observed that, at room temperature, P/E cycles with a shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76b524eaf57f3e6d87f2960c58825e8
https://doi.org/10.1109/ted.2020.3024484
https://doi.org/10.1109/ted.2020.3024484
Autor:
Hiroyuki Nagai, Hiroshi Watanabe, Genji Nakamura, Tamotsu Morimoto, Yasushi Akasaka, Hsin-Jyun Lin, Koji Akiyama, Yoshihiro Hirota
Publikováno v:
IEEE Transactions on Electron Devices. 67:2503-2509
We have observed and analyzed the ${1}/{f}^{{1}+\alpha }$ noise in transient leakage current through a metal–insulator–metal stacked high- ${k}$ capacitor of TiN–ZrO2–TiO2–TiN. The ZrO2 and TiO2 films, formed by atomic layer deposition, are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9d77e361709bb4b8240a02d7e17f7e
https://doi.org/10.1109/ted.2020.2988440
https://doi.org/10.1109/ted.2020.2988440
Autor:
Kiichi Furukawa, Kota Umezawa, Shigetoshi Sugawa, Hiroshi Watanabe, Hsin Jyun Lin, Rihito Kuroda, Akinobu Teramoto
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:043004
The conductance method has been extensively used to analyze the dielectric-semiconductor interfaces by assuming a continuous density of the interface traps. If dangling bonds are dense at the interface, the wavefunction tails of electrons in the dang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33ad347db5fd4e8b5e924f4633e48e54
https://doi.org/10.1149/2162-8777/abe8b5
https://doi.org/10.1149/2162-8777/abe8b5
Autor:
Hsin-Jyun Lin, Hiroshi Watanabe, Akinobu Teramoto, Rihito Kuroda, Kota Umezawa, Kiichi Furukawa, Shigetoshi Sugawa
Publikováno v:
ECS Journal of Solid State Science & Technology; Apr2021, Vol. 10 Issue 4, p43-49, 7p