Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hsin-Che Chiang"'
Autor:
Hsin-Che Chiang, 蔣昕哲
107
In order to cope with the development of the renewable energy policy in the Republic of China in recent years and promote energy transformation, the power generations of firepower and nuclear power and other traditional units are reduced to
In order to cope with the development of the renewable energy policy in the Republic of China in recent years and promote energy transformation, the power generations of firepower and nuclear power and other traditional units are reduced to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/92gv92
Autor:
Hsin-Che Chiang, 江欣哲
97
In this thesis, we had optimized the sulfide treatment on GaAs surface and also eliminate the surface state to 5E12 (cm-2eV-1) successfully. In the beginning, we analyzed the component of Ga 2p3 and As 2p3 photoemission spectra with different
In this thesis, we had optimized the sulfide treatment on GaAs surface and also eliminate the surface state to 5E12 (cm-2eV-1) successfully. In the beginning, we analyzed the component of Ga 2p3 and As 2p3 photoemission spectra with different
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01830398381920680331
Autor:
Hsin-Che Chiang, 江欣哲
90
In this thesis, we improve the photoelectric characteristics of bi-layer organic light-emitting diodes (OLEDs) by introducing N2 gas into thermal chamber to co-deposit with different organic layers. Turn-on and operating voltages are successf
In this thesis, we improve the photoelectric characteristics of bi-layer organic light-emitting diodes (OLEDs) by introducing N2 gas into thermal chamber to co-deposit with different organic layers. Turn-on and operating voltages are successf
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/scaqh8
Autor:
Shyh-Fann Ting, T. Y. Lin, Hsin-Che Chiang, Jyh-Jier Ho, Shiue-Lung Chen, W.J. Lee, Wen-Rong Chang, C.Y. Lin, Y.K. Fang
Publikováno v:
Solid-State Electronics. 47:1127-1130
In this letter, output luminance, current efficiency and power efficiency of the organic light emitting diodes (OLEDs) with N 2 doped hole transport layer (HTL) have been studied in detail. Experimental results show that the current efficiency and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d265b8a9a94c522251121eda5c7f4602
https://doi.org/10.1016/s0038-1101(02)00497-5
https://doi.org/10.1016/s0038-1101(02)00497-5
Autor:
Yong-Shiuan Tsair, Yean-Kuen Fang, Jyh-Jier Ho, Hsin-Che Chiang, Cheng-Nan Chang, Shyh-Fann Ting, Ming-Chun Hsieh, Wen-Tse Hsieh, Chun-Sheng Lin
Publikováno v:
Journal of Electronic Materials. 31:1341-1346
Cubic crystalline silicon-carbon nitride (Si1−x−yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1−x−yCxNy films grown with SiH3CH3, C2H4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6726d817ef3778631cc949647ac8aec0
https://doi.org/10.1007/s11664-002-0119-2
https://doi.org/10.1007/s11664-002-0119-2
Autor:
Jyh-Jier Ho, S. C. Hou, W. D. Wang, C.Y. Lin, Shiue-Lung Chen, Yean-Kuen Fang, Wen-Rong Chang, T. Y. Lin, Hsin-Che Chiang, Shyh-Fann Ting, W.J. Lee
Publikováno v:
Solid-State Electronics. 47:927-929
In this letter, I/V curves, output luminance of the organic light emitting diodes (OLEDs) with N2 doped electron transport layer (ETL) have been studied in detail. Experimental results show that the turn on voltage and driving voltage of OLEDs with E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::538b0c991ba441f78d2fd75290a74d8c
https://doi.org/10.1016/s0038-1101(02)00393-3
https://doi.org/10.1016/s0038-1101(02)00393-3
Autor:
Shyh-Fann Ting, Jyh-Jier Ho, Ming-Chun Hsieh, Wen-Tse Hsieh, Cheng-Nan Chang, Hsin-Che Chiang, Yong-Shiuan Tsair, Yean-Kuen Fang, Chun-Sheng Lin
Publikováno v:
IEEE Electron Device Letters. 23:142-144
Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a6e6487137544aacef23fc940fdee3
https://doi.org/10.1109/55.988818
https://doi.org/10.1109/55.988818
Autor:
Guang-Li Luo, Chun Hui Yang, Chun-Yen Chang, Chao-Ching Cheng, Chih-Kuo Tseng, Chao-Hsin Chien, Hsin-Che Chiang
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e35fedfa95631fa3458d1404c9f0197
https://doi.org/10.7567/ssdm.2007.g-7-3
https://doi.org/10.7567/ssdm.2007.g-7-3
Autor:
Shyh-Fann Ting, Ming-Chun Hsieh, Cheng-Nan Chang, Yong-Shiuan Tsair, Wen-Tse Hsieh, Chun-Sheng Lin, Jyh-Jier Ho, Yean-Kuen Fang, Hsin-Che Chiang
Publikováno v:
Electrochemical and Solid-State Letters. 4:G91
© The Electrochemical Society, Inc. [2001]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651268846a4de3fede46a2a194b9fb89
https://doi.org/10.1149/1.1405995
https://doi.org/10.1149/1.1405995
Autor:
Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Chih-Kuo Tseng, Hsin-Che Chiang, Chun-Hui Yang, Chun-Yen Chang
Publikováno v:
Journal of The Electrochemical Society; Mar2008, Vol. 155 Issue 3, pG56-G60, 5p, 1 Diagram, 1 Chart, 1 Graph