Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Hsin-Chang Lee"'
Autor:
Hsin-Chang Lee, 李信璋
100
When cells attach onto extracellular matrix (ECM), the integrin-mediated focal adhesions (FAs) provide the linkages of cells to ECM and transmit mechanical forces between the ECM and the actin cytoskeleton. The linkages allow cells to sense
When cells attach onto extracellular matrix (ECM), the integrin-mediated focal adhesions (FAs) provide the linkages of cells to ECM and transmit mechanical forces between the ECM and the actin cytoskeleton. The linkages allow cells to sense
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/28689076637229133331
Autor:
Hsin-Chang Lee, 李信昌
98
The aim of this investigation was to study the perspective of the Sensior Vocational School Teachers on the Codes of the teacher professional ethics. The study was performed by surveying full-time teachers from 156 vocational high schools usi
The aim of this investigation was to study the perspective of the Sensior Vocational School Teachers on the Codes of the teacher professional ethics. The study was performed by surveying full-time teachers from 156 vocational high schools usi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r6r6h5
Autor:
Shu Chien, Juan C. Lasheras, Juan C. del Álamo, Hsin Chang Lee, Hsiao Hui Lee, Katie E. Osterday, Chih Chiang Chou, Sung Sik Hur
Publikováno v:
Proceedings of the National Academy of Sciences. 110:2840-2845
Cells can sense and respond to physical properties of their surrounding extracellular matrix. We have demonstrated here that tyrosine phosphatase Shp2 plays an essential role in the response of mouse embryonic fibroblasts to matrix rigidity. On rigid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8383a8adac7b2e171d5ec76a4d5c5f2
https://doi.org/10.1073/pnas.1222164110
https://doi.org/10.1073/pnas.1222164110
Autor:
Cheng-Hsuan Huang, Chia-Jen Chen, Ta-Cheng Lien, Hsin-Chang Lee, Chen Hsuan-Chen, Gaston Lee, Ren-Hao Lin, Anthony Yen, Chien-Cheng Chen
Publikováno v:
SPIE Proceedings.
Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks, unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better understanding of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7938b8994ce8af6ceb705a6f4a3c12eb
https://doi.org/10.1117/12.2245332
https://doi.org/10.1117/12.2245332
Autor:
Ta-Cheng Lien, Tzu-Ling Liu, Ho Yen-Cheng, Chien-Cheng Chen, Chia-Jen Chen, Anthony Yen, Chih-Cheng Lin, Shao-Wen Chang, Hsin-Chang Lee
Publikováno v:
SPIE Proceedings.
The authors present a detailed observation of the charge-induced pattern positioning errors (CIPPEs) in a variableshape e-beam writer on an opaque-MoSi-over-glass (OMOG) mask by directly measuring the pattern shifts using a mask registration tool. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc9c0ca8c12fa86a1247dd0d56ec2261
https://doi.org/10.1117/12.2200961
https://doi.org/10.1117/12.2200961
Autor:
Anthony Yen, Ho Yen-Cheng, Hsin-Chang Lee, Ta-Cheng Lien, Chia-Jen Chen, Chien-Cheng Chen, Chih-Cheng Lin, Shao-Wen Chang
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:021409
Charging-induced pattern positioning errors (CIPPEs) from a 50-kV variable-shape e-beam writer on an opaque-MoSi-over-glass mask has been carefully characterized by directly measuring the pattern shifts using a high-accuracy mask registration tool. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0068abcb2948df9e1c36988fa14b8548
https://doi.org/10.1117/1.jmm.15.2.021409
https://doi.org/10.1117/1.jmm.15.2.021409
Autor:
Allen Chang, Hsin-Chang Lee, I-S. Huang, H. H. Liu, John Lin, Arthur Lin, R. C. Peng, Benjamin Szu-Min Lin, Ivan Lalovic
Publikováno v:
SPIE Proceedings.
As IC dimensions continue to shrink beyond the 22nm node, optical single exposure cannot sustain the resolution required and various double patterning techniques have become the main stream prior to the availability of EUV lithography. Among various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff40eeba22dfd5ca21d592cf1f41f57
https://doi.org/10.1117/12.916420
https://doi.org/10.1117/12.916420
Autor:
Vivien Wang, C. R. Liang, Willie Wang, Jimmy Hu, H. L. Chung, Andreas Fuchs, Noelle Wright, Hsin-Chang Lee, Kaustuve Bhattacharyya, Y. D. Fan, Spencer Lin, Maurits van der Schaar, Jacky Huang, Chih-Ming Ke, Victor Shih, Kiwi Yuan, H. H. Liu, John Lin, Cathy Wang, Mir Shahrjerdy, Karel van der Mast
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
A new metrology technique is being evaluated to address the need for accuracy, precision, speed and sophistication in metrology in near-future lithography. Attention must be paid to these stringent requirements as the current metrology capabilities m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1587a8a4c9f5f6a73e48943119e1c7
https://doi.org/10.1117/12.814860
https://doi.org/10.1117/12.814860
Autor:
Hsin-Chang Lee, Rafael Aldana, C. P. Yeh, Xu Xie, R. C. Peng, Simon Hsieh, Chih-Tsung Shih, A. Bruguier, John Lin, H. Cao, Y. W. Guo, Ching-Yu Chang, Ronald Goossens, P. C. Huang, H. H. Liu, Tsung-Chih Chien, Y. Cao, Jen-Tin Lee, K. W. Chang, Wenjin Shao, Chia-Yang Chang
Publikováno v:
SPIE Proceedings.
Given the decrease in k1 factor for 65nm-node lithography technology and beyond, it is increasingly important to understand and control the variables which impact scanner imaging behavior in the lithography process. In this work, we explore using mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a6d04acc1cdf2a1adcb0f41abe2cfd
https://doi.org/10.1117/12.813974
https://doi.org/10.1117/12.813974
Autor:
Jimmy Hu, Wim M. J. Coene, Karel van der Mast, Victor Shih, Vivien Wang, Hsin-Chang Lee, Tony Yen, Chih-Ming Ke, Kaustuve Bhattacharyya, H. H. Liu, John Lin, Jacky Huang, Marc Noot, Kiwi Yuan, Noelle Wright, Y. D. Fan, Willie Wang, Ruben Alvarez Sanchez, C. R. Liang, H. L. Chung
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
A brand new CD metrology technique that can address the need for accuracy, precision and speed in near future lithography is probably one of the most challenging items. CDSEMs have served this need for a long time, however, a change of or an addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b77540de9dc04f5394a8fcadaf0acda2
https://doi.org/10.1117/12.814909
https://doi.org/10.1117/12.814909