Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hsin Che Lee"'
Publikováno v:
Journal of Indian Society of Periodontology, Vol 25, Iss 4, Pp 350-354 (2021)
Drug-influenced gingival enlargement (DIGE) and reduced bone support caused by periodontitis are two of the etiologic factors for pathologic tooth migration (PTM). Comprehensive management, including surgical, orthodontic, and prosthodontic treatment
Externí odkaz:
https://doaj.org/article/a738333397e44191891d1a3207fee46f
Publikováno v:
Optics Communications. 532:129255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8736c602f5a22156ec0f66c86ba57abc
https://doi.org/10.1016/j.optcom.2022.129255
https://doi.org/10.1016/j.optcom.2022.129255
Publikováno v:
Modern Physics Letters B. 35
In the present study, AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated through metal–organic chemical vapor deposition. Gate recess etching, combined with inductively coupled plasma reactive ion etching, was adopted, and etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de5902204086c69ccd8b2696ee0b49b
https://doi.org/10.1142/s021798492141013x
https://doi.org/10.1142/s021798492141013x
Publikováno v:
Modern Physics Letters B. 35
In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5946cecf9fe5942f40021a4e9862045
https://doi.org/10.1142/s0217984921410104
https://doi.org/10.1142/s0217984921410104
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
GaN-based electron mobility transistors (HEMTs) have been widely used in high-frequency or high-power device application. However, GaN-based HEMT is usually normally-on mode due to the high-density two-dimensional electron gas (2DEG) caused by its st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f672d94588b62dcf3aa16a0a3567e556
https://doi.org/10.1109/ecice50847.2020.9301926
https://doi.org/10.1109/ecice50847.2020.9301926
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
In this work, a method of analyzing the crystal quality of epitaxial GaN by Raman spectroscopy was established. An AlN layer was deposited on sapphire substrate by sputtering and an AlGaN/GaN HEMT device is fabricated. The relationship between the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0dddfd90a2e0afed5b7e45a324402a7
https://doi.org/10.1109/ecice50847.2020.9301986
https://doi.org/10.1109/ecice50847.2020.9301986
Publikováno v:
IEEE Journal of Photovoltaics. 7:184-190
The sequential deposition process is widely used to fabricate planar structure perovskite solar cells because of better uniformity and perfect surface coverage of perovskite films. However, it is difficult to control the crystallization of perovskite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c31b8c322dcd053ffb134b8d436a05
https://doi.org/10.1109/jphotov.2016.2621341
https://doi.org/10.1109/jphotov.2016.2621341
Publikováno v:
Solar Energy Materials and Solar Cells. 132:570-577
In ordinary polymer solar cells, the short exciton diffusion length causes increasing probability of electron–hole recombination as the active layer thickness exceeds the diffusion length. Hence, the diffusion sets a thickness limitation of the act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6646cf9c5a15ee13f6ddc646a8024fe
https://doi.org/10.1016/j.solmat.2014.10.013
https://doi.org/10.1016/j.solmat.2014.10.013
Autor:
Lee Wei Yu, Hsin Che Lee, Yen Juei Lin, Ming Lei Chang, Li Ling Chu, I. Chen Yang, Kun Yi Lee, Yao Tsung Tsai, Yi Pin Yang
Publikováno v:
International Journal of Advancements in Computing Technology. 4:274-282
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7b51b63e9d1912e0f2e5b69f2ba597
https://doi.org/10.4156/ijact.vol4.issue23.33
https://doi.org/10.4156/ijact.vol4.issue23.33
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The sequential deposition process is widely used to fabricate planar structure perovskite solar cells because of better uniformity and perfect surface coverage of perovskite films. However, it is difficult to control the crystallization of perovskite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d538e9d8bedf41dfc46e4cbc486d2579
https://doi.org/10.1109/pvsc.2016.7749713
https://doi.org/10.1109/pvsc.2016.7749713