Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hsin‐Yuan Chiu"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Ang-Sheng Chou, Yu-Tung Lin, Yuxuan Cosmi Lin, Ching-Hao Hsu, Ming-Yang Li, San-Lin Liew, Sui-An Chou, Hung-Yu Chen, Hsin-Yuan Chiu, Po-Hsun Ho, Ming-Chun Hsu, Yu-Wei Hsu, Ning Yang, Wei-Yen Woon, Szuya Liao, Duen-Huei Hou, Chao-Hsin Chien, Wen-Hao Chang, Iuliana Radu, Chih-I Wu, H.-S. Philip Wong, Han Wang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Hsin-Yuan Chiu, 邱信源
93
The in-building low-voltage power-line networks are a convenient and low cost medium for digital communications. However, since power-line networks are not originally designed for communication, it may suffer from a lot of channel degradation
The in-building low-voltage power-line networks are a convenient and low cost medium for digital communications. However, since power-line networks are not originally designed for communication, it may suffer from a lot of channel degradation
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/27792820080513235246
Autor:
Chiu, Hsin‐Yuan, Chao, Tzu‐Ang, Safron, Nathaniel S., Su, Sheng‐Kai, Liew, San‐Lin, Yun, Wei‐Sheng, Mao, Po‐Sen, Lin, Yu‐Tung, Hou, Vincent Duen‐Huei, Lee, Tung‐Ying, Chang, Wen‐Hao, Passlack, Matthias, Wong, Hon‐Sum Philip, Radu, Iuliana P., Wang, Han, Pitner, Gregory, Chien, Chao‐Hsin
Publikováno v:
Advanced Electronic Materials; Mar2024, Vol. 10 Issue 3, p1-7, 7p