Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hsien-Yang Liu"'
Publikováno v:
Materials, Vol 17, Iss 11, p 2665 (2024)
2D field-effect transistors (FETs) fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for the silicon-based CMOS. However, the lack of advancement in p-type contact is also a key factor hindering TMD-based CMO
Externí odkaz:
https://doaj.org/article/953b5b626541448cb5e0fe09ad91f53d
Autor:
Ting-Yu Chang, Kuan-Chi Wang, Hsien-Yang Liu, Jing-Hua Hseun, Wei-Cheng Peng, Nicolò Ronchi, Umberto Celano, Kaustuv Banerjee, Jan Van Houdt, Tian-Li Wu
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2104 (2023)
In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping spec
Externí odkaz:
https://doaj.org/article/91fc261f328846a89ac69a003a88a21d
