Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Hsien-Wen Wan"'
Publikováno v:
Nanomaterials, Vol 12, Iss 8, p 1309 (2022)
Beyond the macroscopic perspective, this study microscopically investigates Si1−xGex(001)-2×1 samples that were grown on the epi Ge(001) and epi Si(001) substrates via molecular-beam epitaxy, using the high-resolution synchrotron radiation photoel
Externí odkaz:
https://doaj.org/article/63484a6340d44e7a9a725439438b5a74
Autor:
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong
Publikováno v:
ACS Omega, Vol 3, Iss 2, Pp 2111-2118 (2018)
Externí odkaz:
https://doaj.org/article/39ec327e5b934ca59abf14fdad78b00c
Publikováno v:
Nanomaterials, Vol 9, Iss 4, p 554 (2019)
In this paper, we investigate the embryonic stage of oxidation of an epi Ge(001)-2 × 1 by atomic oxygen and molecular O2 via synchrotron radiation photoemission. The topmost buckled surface with the up- and down-dimer atoms, and the first subsurface
Externí odkaz:
https://doaj.org/article/8b4d8862b90c4b41b07678425ca8529e
Autor:
Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Tien-Yu Chu, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12223d237c6e35269269f5ba41652818
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134479
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134479
Autor:
Hsien-Wen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Yu-Jie Hong, Tien-Yu Chu, Mu-Tung Chang, Chia-Hung Hsu, Jueinai Kwo, Minghwei Hong
Publikováno v:
ACS Applied Electronic Materials. 4:2641-2647
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb71a257291c5568dc3ac8bd8d6869cf
https://doi.org/10.1021/acsaelm.2c00062
https://doi.org/10.1021/acsaelm.2c00062
Publikováno v:
ACS Applied Electronic Materials. 3:4484-4489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a8494c100550e2cb1f10237e7706f5
https://doi.org/10.1021/acsaelm.1c00623
https://doi.org/10.1021/acsaelm.1c00623
Autor:
J. Kwo, Chien-Ting Wu, Yu-Jie Hong, Yi-Ting Cheng, Tun-Wen Pi, Chao-Kai Cheng, Hsien-Wen Wan, Minghwei Hong, Chia-Hung Hsu
Publikováno v:
ACS Applied Electronic Materials. 3:2164-2169
Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct depositio...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3512dfa9e65e75bd89437979a29aced
https://doi.org/10.1021/acsaelm.0c01134
https://doi.org/10.1021/acsaelm.0c01134
Autor:
J. Kwo, Mei-Yi Li, Keng-Yung Lin, Minghwei Hong, Yen-Hsun Lin, Hsien-Wen Wan, Chia-Hung Hsu, Chao-Kai Cheng, Ren-Fong Cai, Lawrence Boyu Young, Shen-Chuan Lo
Publikováno v:
Crystal Growth & Design. 19:2030-2036
Single-crystal metastable hexagonal perovskite YAlO3 (H-YAP) films were epitaxially grown on GaAs(111)A by utilizing sub-nanolaminated (snl) and nanolaminated (nl) atomic layer deposited (ALD) Y2O3/Al2O3 multilayers in situ on freshly prepared pristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::394c658a29c0b0df03c943d72a5822f7
https://doi.org/10.1021/acs.cgd.8b01375
https://doi.org/10.1021/acs.cgd.8b01375
Publikováno v:
ECS Meeting Abstracts. :1067-1067
Silicon-germanium (SiGe) is replacing silicon (Si) as the channel layer for the p-type metal-oxide-semiconductor (pMOS) in the aggressively scaled complementary MOS (CMOS) technology. Many research efforts involving SiGe gate stacks have resulted in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::033636521fbc08aa4cb09728b2c6e3a2
https://doi.org/10.1149/ma2022-01191067mtgabs
https://doi.org/10.1149/ma2022-01191067mtgabs
Publikováno v:
ECS Meeting Abstracts. :1053-1053
Si capping layer is the most notable approach used in Ge metal-oxide-semiconductor (MOS);1-2 however, the Ge segregation and diffusion occurred during the growth of Si.3-4 The formation of undesirable GeOx is detrimental to the Ge nMOS reliability.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad125f42f02ef663089a4667e7c4f8e6
https://doi.org/10.1149/ma2022-01191053mtgabs
https://doi.org/10.1149/ma2022-01191053mtgabs