Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Hsien-Lien Huang"'
Autor:
Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Publikováno v:
APL Materials, Vol 11, Iss 6, Pp 061113-061113-12 (2023)
Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect of Si implantation a
Externí odkaz:
https://doaj.org/article/d76288f41a184bd9959f16a3ad23a14f
Autor:
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041112-041112-12 (2023)
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2
Externí odkaz:
https://doaj.org/article/d9ce8e2ce5964f16991a611bddb1df00
Autor:
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 9, Iss 10, Pp 101109-101109-15 (2021)
Single α-phase (AlxGa1−x)2O3 thin films are grown on m-plane sapphire (α-Al2O3) substrates via metalorganic chemical vapor deposition. By systematically tuning the growth parameters including the precursor molar flow rates, chamber pressure, and
Externí odkaz:
https://doaj.org/article/a02a361155e04c369bc4aa3ab7887306
Autor:
Jared M. Johnson, Hsien-Lien Huang, Mengen Wang, Sai Mu, Joel B. Varley, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Nidhin Kurian Kalarickal, Siddharth Rajan, Hongping Zhao, Chris G. Van de Walle, Jinwoo Hwang
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051103-051103-8 (2021)
The development of novel ultra-wide bandgap (UWBG) materials requires precise understanding of the atomic level structural origins that give rise to their important properties. We study the aluminum atom incorporation, defect formation, and their rel
Externí odkaz:
https://doaj.org/article/d88fbad9ea1f470e8b81b63529f2fb07
Autor:
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Hsien-Lien Huang, Jith Sarker, Menglin Zhu, Md Rezaul Karim, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 8, Iss 8, Pp 089102-089102-2 (2020)
Externí odkaz:
https://doaj.org/article/507be0428b494a5ba4e0d01a69bc9393
Autor:
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Hsien-Lien Huang, Jith Sarker, Menglin Zhu, Md Rezaul Karim, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031104-031104-8 (2020)
This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%) via metalorganic chemical vapor deposition (MOCVD). For the Al composition x < 27%, high
Externí odkaz:
https://doaj.org/article/bcabb37e93694363a84be68ee101fe28
Autor:
Jared M. Johnson, Zhen Chen, Joel B. Varley, Christine M. Jackson, Esmat Farzana, Zeng Zhang, Aaron R. Arehart, Hsien-Lien Huang, Arda Genc, Steven A. Ringel, Chris G. Van de Walle, David A. Muller, Jinwoo Hwang
Publikováno v:
Physical Review X, Vol 9, Iss 4, p 041027 (2019)
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of
Externí odkaz:
https://doaj.org/article/753ff00c08774f66ab627758de659be3
Autor:
Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi
Publikováno v:
ACS Applied Materials & Interfaces. 15:7137-7147
Autor:
Xiaolei Guo, Hsien-Lien Huang, Menglin Zhu, Karthikeyan Hariharan, Szu-Chia Chien, Ngan Huynh, Jinwoo Hwang, Wolfgang Windl, Christopher D. Taylor, Eric J. Schindelholz, Gerald S. Frankel
Publikováno v:
Materials Today.
Autor:
Brian M. Foley, Sukwon Choi, David W. Snyder, Yiwen Song, Hsien-Lien Huang, Sriram Krishnamoorthy, Craig D. McGray, Jacob H. Leach, Arkka Bhattacharyya, Yingying Zhang, Kevin Ferri, Sarit Zhukovsky, Daniel Shoemaker, Carlos Perez, Tina Hess, Bladimir Ramos-Alvarado, Xiaojia Wang, Jinwoo Hwang, Jon Paul Maria, Robert M. Lavelle, C. Ulises Gonzalez-Valle
Publikováno v:
ACS Applied Materials & Interfaces. 13:40817-40829
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on G