Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hsien-Hsin Lin"'
Autor:
Hsien-Hsin Lin, 林弦信
105
Owing to new technological advances and the high penetration of internet, virtual reality is not only gradually becoming more and more popular, but also such a challenging business since the costs and techniques of development are required.
Owing to new technological advances and the high penetration of internet, virtual reality is not only gradually becoming more and more popular, but also such a challenging business since the costs and techniques of development are required.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13078813738979063973
Autor:
Hsien-Hsin Lin, 林憲信
98
Single-walled carbon nanotubes (SWCNTs) were purified and dispersed first, and then the SWCNTs were sprayed on the surface of Polyethersulfone (PES) as the transparent conductive layer. High optical transmittance, high thermal-resistant and a
Single-walled carbon nanotubes (SWCNTs) were purified and dispersed first, and then the SWCNTs were sprayed on the surface of Polyethersulfone (PES) as the transparent conductive layer. High optical transmittance, high thermal-resistant and a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9nakf9
Autor:
H.C. Chu, Chia-Shiung Tsai, S.W. Huang, Hsien-Hsin Lin, W. S. Liao, Chung-Hao Tsai, S.P. Jeng, Doug C. H. Yu, C.Y. Pai, C.H. Chang, H.P. Hu, W.C. Chiang, Shang-Yun Hou, T.H. Liu
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A reliability proven high-K (HK) metal-insulator-metal (MiM) structure has been verified within the silicon interposer in a chip-on-wafer-on-substrate (CoWoS) packaging for heterogeneous system-level decoupling application. The HK dielectric has an e
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Autor:
J.Y.-C. Sun, Shih-Hian Huang, Carlos H. Diaz, Ching-Wei Tsai, Mong-Song Liang, Hsien-Hsin Lin, Shih-Chang Chen, Howard Wang, Tze-Liang Lee
Publikováno v:
2006 International Electron Devices Meeting.
A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive cont
Autor:
Wang, H.C.-H., Shih-Hian Huang, Ching-Wei Tsai, Hsien-Hsin Lin, Tze-Liang Lee, Shih-Chang Chen, Diaz, C.H., Mong-Song Liang, Sun, J.Y.-C.
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Autor:
Hsien-Hsin, Lin, 林憲信
90
The minimization of critical dimensions in microelectronic devices gives rise to an increased density of structures per wafer. As a result, the circuit current densities and Joule heating increase with the decrease in size. In addition, at a
The minimization of critical dimensions in microelectronic devices gives rise to an increased density of structures per wafer. As a result, the circuit current densities and Joule heating increase with the decrease in size. In addition, at a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/k4a9w9