Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hsien-Chih Huang"'
Autor:
Shunya Namiki, Hsien-Chih Huang, Julio Soares, Xihang Wu, Jeong Dong Kim, Bill Jiang, Vaanchit Srikumar, Xiuling Li
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 3, Pp n/a-n/a (2021)
III–V semiconductor‐based photodiodes with graphene incorporated have been studied in recent years due to the attractive optoelectronic properties of graphene, including optical transparency and enhanced photoresponsivity. The photoresponsivity c
Externí odkaz:
https://doaj.org/article/e2a4415f5b354cd7b5d63e435b8e8972
Autor:
Hsien-Chih Huang, 黃咸誌
105
Germanium-tin (GeSn) is a promising channel material to replace silicon due its high hole mobility. However, only few work on GeSn n-FETs were reported and the device performance was poor. This might be attributed to a large resistance in th
Germanium-tin (GeSn) is a promising channel material to replace silicon due its high hole mobility. However, only few work on GeSn n-FETs were reported and the device performance was poor. This might be attributed to a large resistance in th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ur3qah
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afce0d2e2de0f323546423cae2d23e7e
https://doi.org/10.1109/jqe.2022.3151971
https://doi.org/10.1109/jqe.2022.3151971
Autor:
Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Xixi Luo, Alex Q. Huang, Hongping Zhao, Xiuling Li
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3320814e3f1e03bca0d6b6fbc6e2470f
https://doi.org/10.1109/edtm55494.2023.10103115
https://doi.org/10.1109/edtm55494.2023.10103115
Autor:
Hsien-Chih Huang, Xiuling Li
Publikováno v:
Ultrawide Bandgap β-Ga2O3 Semiconductor ISBN: 9780735425033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99fc5c50d6012feb44d4fe3126d800d9
https://doi.org/10.1063/9780735425033_009
https://doi.org/10.1063/9780735425033_009
Publikováno v:
physica status solidi (a). 220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8cbd1bb2cccdd4ca753449c8c4d23e7
https://doi.org/10.1002/pssa.202200616
https://doi.org/10.1002/pssa.202200616
Publikováno v:
Journal of Materials Research. 36:4756-4770
β-Ga2O3, a promising ultra-wide bandgap material for future high-power electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous attention in recent years due to its wide bandgap of ~ 4.8 eV, high breakdown electric field,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157c48ef3d0d309d7c3949edaef2a92c
https://doi.org/10.1557/s43578-021-00413-0
https://doi.org/10.1557/s43578-021-00413-0
Autor:
Wei Sun, Che Yu Liu, Xiuling Li, Weidong Zhou, Jeong Dong Kim, Hsien Chih Huang, Hao-Chung Kuo, Wonsik Choi, Nelson Tansu, Kyooho Jung
Publikováno v:
ACS Applied Electronic Materials. 2:419-425
Compound semiconductor heterojunctions have enabled various optoelectronic devices. Nonetheless, the formation of heterojunctions is limited by the lattice matching between the two materials. On th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74998fd167df63bf7ca11e88f57740cb
https://doi.org/10.1021/acsaelm.9b00607
https://doi.org/10.1021/acsaelm.9b00607
Autor:
Dong Liu, Xun Zhan, Xiuling Li, Hsien Chih Huang, Kelson D. Chabak, Zhenqiang Ma, Jeong Dong Kim, Munho Kim, Alexander Kvit, Jian-Min Zuo
Publikováno v:
ACS Nano. 13:8784-8792
β-Ga2O3, with a bandgap of ∼4.6–4.9 eV and readily available bulk substrates, has attracted tremendous interest in the wide bandgap semiconductor community. Producing high aspect ratio β-Ga2O3 3D n...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e81d65ba6b9c9019913379cdee55389
https://doi.org/10.1021/acsnano.9b01709
https://doi.org/10.1021/acsnano.9b01709
Autor:
Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Zhendong Yang, Xixi Luo, Alex Q. Huang, Andrew Green, Kelson Chabak, Hongping Zhao, Xiuling Li
Publikováno v:
Applied Physics Letters. 121:052102
In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49989c36940d4e40c0bb0fc27c865158
https://doi.org/10.1063/5.0096490
https://doi.org/10.1063/5.0096490