Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hsiao-Han Lo"'
Autor:
Hsiao-Han Lo, 羅筱涵
95
Image inpainting is an interesting and practical image processing technology. We can remove the object in the image at our pleasure, and fill in the removed pixels (i.e. damaged area) by image inpainting. For the purpose of patching up automa
Image inpainting is an interesting and practical image processing technology. We can remove the object in the image at our pleasure, and fill in the removed pixels (i.e. damaged area) by image inpainting. For the purpose of patching up automa
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89975449010845384468
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 119:7449-7462
Autor:
Wei-Lun Chen, Shang Shian Yang, Ning Hsiu Yuan, Wei Yu Zhou, Yu-Pu Yang, Hsiao-Han Lo, Peter J. Wang, Walter Lai, Yiin-kuen Fuh, Tomi T. Li
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Publikováno v:
The International Journal of Advanced Manufacturing Technology. 114:1975-1990
In this study, aluminum nitride (AlN) thin films were deposited on Si (100) and investigated on the minimum film residual stress with varying two critical deposition conditions in N2 gas flow and power. The pulsed DC reactive sputtering of aluminum t
Autor:
Wei-Yu Zhou, Hsuan-Fan Chen, Xue-Li Tseng, Hsiao-Han Lo, Peter J. Wang, Ming-Yu Jiang, Yiin-Kuen Fuh, Tomi T. Li
Publikováno v:
Materials; Volume 16; Issue 8; Pages: 3015
In the present study, the sputtered aluminum nitride (AlN) films were processed in a reactive pulsed DC magnetron system. We applied a total of 15 different design of experiments (DOEs) on DC pulsed parameters (reverse voltage, pulse frequency, and d
Autor:
Yiin Kuen Fuh, Walter Lai, Te Yun Lu, Tomi T. Li, Peter J. Wang, Yu Pu Yang, Wei Lun Chen, Hsiao Han Lo
Publikováno v:
Materials; Volume 14; Issue 16; Pages: 4445
Materials, Vol 14, Iss 4445, p 4445 (2021)
Materials
Materials, Vol 14, Iss 4445, p 4445 (2021)
Materials
In this study, we submit a complex set of in-situ data collected by optical emission spectroscopy (OES) during the process of aluminum nitride (AlN) thin film. Changing the sputtering power and nitrogen(N2) flow rate, AlN film was deposited on Si sub
Autor:
Song-Ho Wang, Yiin Kuen Fuh, Wei-Lun Chen, Walter Lai, Tomi T. Li, Yu Pu Yang, Peter J. Wang, Hsueh-Er Chang, Te-Yun Lu, Hsiao-Han Lo
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
Plasma enhanced chemical vapor deposition (PECVD) is commonly known to be used in the field of silicon thin-film solar systems for the application of nanocrystalline silicon (nc-Si:H) film. The chemical deposition is a rather lengthy process, and it
Publikováno v:
Applied Sciences
Volume 11
Issue 2
Applied Sciences, Vol 11, Iss 519, p 519 (2021)
Volume 11
Issue 2
Applied Sciences, Vol 11, Iss 519, p 519 (2021)
For personal and daily activities, it is highly desirable to collect energy from multiple sources, not only for charging personal electronics but also for charging devices that may in the future sense and transmit information for healthcare and biome
Publikováno v:
Applied Sciences, Vol 11, Iss 2, p 519 (2021)
For personal and daily activities, it is highly desirable to collect energy from multiple sources, not only for charging personal electronics but also for charging devices that may in the future sense and transmit information for healthcare and biome
Externí odkaz:
https://doaj.org/article/7d5adc9f2baa4ba4aea73ca9c4cec2ac