Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hsiao Chin Tuan"'
Publikováno v:
Microelectronics Reliability. 61:125-128
A SOI platform is developed for a LDMOS transistor from 70 V to 300 V. It is one of the best cases covering the wide voltage range. By applying novel DTI technology, the pitch of a single LDMOS transistor cell is reduced. Thin silicon and oxide film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c54a2bcf79986989f5e2963dde1d3d
https://doi.org/10.1016/j.microrel.2015.11.004
https://doi.org/10.1016/j.microrel.2015.11.004
Publikováno v:
IEEE Transactions on Electron Devices. 60:3835-3841
In this paper, important parameters of the p-buried layer of a high-voltage reduced surface field p-n diode are analyzed and discussed in terms of effects on device performance, including breakdown voltage and specific turn-on resistance, Ron,sp. Gui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c43012be6f623c0047cd84625ec1609
https://doi.org/10.1109/ted.2013.2283582
https://doi.org/10.1109/ted.2013.2283582
Autor:
Ruey-Hsin Liou, Hsueh-Liang Chou, Jeng Gong, Yu-Chang Jong, J. C. W. Ng, Chih-Fang Huang, Hsiao-Chin Tuan
Publikováno v:
IEEE Transactions on Electron Devices. 59:3042-3047
In this paper, it is the first time that the effect of self-heating of LDMOS transistors operating in the so-called expansion regime of the output characteristics is studied. Experimental characterization and numerical simulations are used to demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a989578520eb7e386b417cba24ef521f
https://doi.org/10.1109/ted.2012.2214036
https://doi.org/10.1109/ted.2012.2214036
Autor:
Hsiao-Chin Tuan
Publikováno v:
VLSI-DAT
Internet of Things (IOT) has caught a lot of attention recently due to tremendous business opportunities. In this talk, the speaker intends to give the historical figures in PC/ NB and smartphones at first, and then bring in the overall view of IOT.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e6cd5b5199ad848f91ef57a7f303247
https://doi.org/10.1109/vlsi-dat.2015.7114558
https://doi.org/10.1109/vlsi-dat.2015.7114558
Autor:
Vikhram V. Swaminathan, Rashid Bashir, Bobby Reddy, Eric Salm, Hsiao Chin Tuan, Carlos Duarte-Guevara, Yi Shao Liu, Fei Lung Lai, Alex Kalnitsky, Ying Kit Tsui, Cheng Chun-Wen
Publikováno v:
Analytical chemistry. 86(16)
The adaptation of semiconductor technologies for biological applications may lead to a new era of inexpensive, sensitive, and portable diagnostics. At the core of these developing technologies is the ion-sensitive field-effect transistor (ISFET), a b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cb5127c9e37247868fde90eb5a71197
https://pubmed.ncbi.nlm.nih.gov/25072939
https://pubmed.ncbi.nlm.nih.gov/25072939
Autor:
Hsiao Chin Tuan, Chun-Wen Cheng, Chia-Hua Chu, Weileun Fang, Jiou-Kang Lee, Kai-Chih Liang, Alex Kalnitsky, David A. Horsley, Chung-Hsien Lin, Te-Hao Lee
Publikováno v:
2012 IEEE Sensors.
A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Anot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b06bd7c90237610af8a2bf1c6c0141f9
https://doi.org/10.1109/icsens.2012.6411212
https://doi.org/10.1109/icsens.2012.6411212
Autor:
Tien-Kan Chung, Robert Chin-Fu Tsai, Nick Y. M. Shen, Sean Cheng, Emerson Cheng, Bruce C. S. Chou, Benior Chen, Kuei-Sung Chang, Yi-Shao Liu, Chung-Hsien Lin, CM Liu, Hsiao Chin Tuan, Alex Kalnitsky
Publikováno v:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
MEMS technology development and MEMS manufacturing activities at TSMC are presented. Two models for process development, i.e. customer product/process “phase-in” and internally developed “platform” are discussed. The latter is a TSMC-MEMS pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce08f7bcc2cf8808cbaecd72e1fc937
https://doi.org/10.1109/transducers.2011.5969891
https://doi.org/10.1109/transducers.2011.5969891
Autor:
S. Filipiak, M. Foisy, John J. Hackenberg, Hsiao-chin Tuan, Xiang-Zheng Bo, Venkat R. Kolagunta, Konstantin V. Loiko, Li-te Lin, Jon Cheek, Paul A. Grudowski, D. Tekleab, Chi-hsi Wu, Vance H. Adams, K.h. Fung
Publikováno v:
2006 IEEE international SOI Conferencee Proceedings.
We report on the optimized transverse and lateral boundaries of dual etch stop layer (dESL) stressors in both PMOS and NMOS achieved in 65nm SOI transistors. We demonstrate that this gives an additional ~20% performance gain in ring oscillators. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e04e380e001b0d73f4de7f4d79ff883
https://doi.org/10.1109/soi.2006.284411
https://doi.org/10.1109/soi.2006.284411
Autor:
C.H. Kung, I.-C. Liao, Hsiao-Chin Tuan, Kuo-Shu Tseng, M.W.D. Ken, Jyh-Jong Lin, Jinq-Min LIn
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
A description is given of a high-performance 1-Mb CMOS mask ROM with access time as fast as 29 ns. The fast access is achieved through bit line capacitance reduction, sensitive amplifier design, and the use of double-metal interconnection. Delta-I no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48898358118bf22f85394fb988f9626d
https://doi.org/10.1109/vtsa.1989.68577
https://doi.org/10.1109/vtsa.1989.68577
Autor:
Jinq-Min LIn, Ken, M.W.D., Hsiao-Chin Tuan, Kung, C.H., Liao, I.-C., Kuo-Shu Tseng, Jyh-Jong Lin
Publikováno v:
International Symposium on VLSI Technology, Systems & Applications; 1989, p36-40, 5p