Zobrazeno 1 - 10
of 1 482
pro vyhledávání: '"Hsiao, T."'
Autor:
Heintz, K. E., Brammer, G. B., Watson, D., Oesch, P. A., Keating, L. C., Hayes, M. J., Abdurro'uf, Arellano-Córdova, K. Z., Carnall, A. C., Christiansen, C. R., Cullen, F., Davé, R., Dayal, P., Ferrara, A., Finlator, K., Fynbo, J. P. U., Flury, S. R., Gelli, V., Gillman, S., Gottumukkala, R., Gould, K., Greve, T. R., Hardin, S. E., Hsiao, T. Y. -Y, Hutter, A., Jakobsson, P., Killi, M., Khosravaninezhad, N., Laursen, P., Lee, M. M., Magdis, G. E., Matthee, J., Naidu, R. P., Narayanan, D., Pollock, C., Prescott, M., Rusakov, V., Shuntov, M., Sneppen, A., Smit, R., Tanvir, N. R., Terp, C., Toft, S., Valentino, F., Vijayan, A. P., Weaver, J. R., Wise, J. H., Witstok, J.
One of the surprising early findings with JWST has been the discovery of a strong "roll-over" or a softening of the absorption edge of Ly$\alpha$ in a large number of galaxies at ($z\gtrsim 6$), in addition to systematic offsets from photometric reds
Externí odkaz:
http://arxiv.org/abs/2404.02211
Autor:
Hsiao, T. -K., Fariña, P. Cova, Oosterhout, S. D., Jirovec, D., Zhang, X., van Diepen, C. J., Lawrie, W. I. L., Wang, C. -A., Sammak, A., Scappucci, G., Veldhorst, M., Demler, E., Vandersypen, L. M. K.
Publikováno v:
Phys. Rev. X 14, 011048 (2024)
Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platfor
Externí odkaz:
http://arxiv.org/abs/2307.02401
Autor:
Vanzella, E., Claeyssens, A., Welch, B., Adamo, A., Coe, D., Diego, J. M., Mahler, G., Khullar, G., Kokorev, V., Oguri, M., Ravindranath, S., Furtak, L. J., Hsiao, T. Yu-Yang, Abdurro'uf, Mandelker, N., Brammer, G., Bradley, L. D., Bradac, M., Conselice, C. J., Dayal, P., Nonino, M., Andrade-Santos, F., Windhorst, R. A., Pirzkal, N., Sharon, K., de Mink, S. E., Fujimoto, S., Zitrin, A., Eldridge, J. J., Norman, C.
Star cluster formation in the early universe and their contribution to reionization remains to date largely unconstrained. Here we present JWST/NIRCam imaging of the most highly magnified galaxy known at z ~ 6, the Sunrise arc. We identify six young
Externí odkaz:
http://arxiv.org/abs/2211.09839
Autor:
van Diepen, C. J., Hsiao, T. -K., Mukhopadhyay, U., Reichl, C., Wegscheider, W., Vandersypen, L. M. K.
Publikováno v:
Physical Review X 11, 041025 (2021)
Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom rema
Externí odkaz:
http://arxiv.org/abs/2103.08238
Autor:
Lodari, M., Hendrickx, N. W., Lawrie, W. I. L., Hsiao, T. -K., Vandersypen, L. M. K., Sammak, A., Veldhorst, M., Scappucci, G.
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a per
Externí odkaz:
http://arxiv.org/abs/2007.06328
Autor:
van Diepen, C. J., Hsiao, T. -K., Mukhopadhyay, U., Reichl, C., Wegscheider, W., Vandersypen, L. M. K.
Publikováno v:
Nature Communications 12, 77 (2021)
Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsi
Externí odkaz:
http://arxiv.org/abs/2002.08925
Autor:
Hsiao, T. -K., van Diepen, C. J., Mukhopadhyay, U., Reichl, C., Wegscheider, W., Vandersypen, L. M. K.
Publikováno v:
Phys. Rev. Applied 13, 054018 (2020)
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the d
Externí odkaz:
http://arxiv.org/abs/2001.07671
Autor:
Hou, H., Chung, Y., Rughoobur, G., Hsiao, T. K., Nasir, A., Flewitt, A. J., Griffiths, J. P., Farrer, I., Ritchie, D. A., Ford, C. J. B.
Publikováno v:
J. Phys. D: Appl. Phys. 51 (2018) 244004 (6pp)
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a
Externí odkaz:
http://arxiv.org/abs/1806.09143
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Autor:
Pogorzelska-Maziarz, M, Rising, KL, Gentsch, AT, Traczuk, A, Hsiao, T, Amadio, G, Haddad, T, Gerolamo, AM
Publikováno v:
In Geriatric Nursing September-October 2021 42(5):1029-1034