Zobrazeno 1 - 10
of 1 642
pro vyhledávání: '"Hsiao, Hsuan"'
Autor:
Huijbregts, Lucas, Hsiao-Hsuan, Liu, Detterer, Paul, Hamdioui, Said, Yousefzadeh, Amirreza, Bishnoi, Rajendra
Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones, wearables, a
Externí odkaz:
http://arxiv.org/abs/2410.09130
Autor:
Hu, Futai, Vinod, Abhinav Kumar, Wang, Wenting, Chin, Hsiao-Hsuan, McMillan, James F., Zhan, Ziyu, Meng, Yuan, Gong, Mali, Wong, Chee Wei
Solitons, the distinct balance between nonlinearity and dispersion, provide a route toward ultrafast electromagnetic pulse shaping, high-harmonic generation, real-time image processing, and RF photonic communications. Here we newly explore and observ
Externí odkaz:
http://arxiv.org/abs/2407.10213
Autor:
Futai Hu, Abhinav Kumar Vinod, Wenting Wang, Hsiao-Hsuan Chin, James F. McMillan, Ziyu Zhan, Yuan Meng, Mali Gong, Chee Wei Wong
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-14 (2024)
Abstract Solitons, the distinct balance between nonlinearity and dispersion, provide a route toward ultrafast electromagnetic pulse shaping, high-harmonic generation, real-time image processing, and RF photonic communications. Here we uniquely explor
Externí odkaz:
https://doaj.org/article/c9256d4d87204fc7acc8914a7a61e4bf
Autor:
Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton
Publikováno v:
AIP Advances, Vol 14, Iss 10, Pp 105326-105326-9 (2024)
Vertical geometry NiO/Ga2O3 heterojunction (HJ) rectifiers and Ni/Au Schottky rectifiers fabricated on the same wafer and each with the same diameter (100 μm) were operated at 77–473 K to compare their capabilities in space-like environments. The
Externí odkaz:
https://doaj.org/article/b3fe746cf9ae41f5aca4c9c26fc93dbf
Publikováno v:
AIP Advances, Vol 14, Iss 9, Pp 095201-095201-7 (2024)
The use of the low work function (4.5 eV) tungsten (W) as a rectifying contact was studied to obtain low on-voltages in W/Ga2O3 Schottky rectifiers and NiO/Ga2O3 heterojunction rectifiers that were simultaneously fabricated on a single wafer. The dev
Externí odkaz:
https://doaj.org/article/3a96c9f253014f179d9a423300627b43
Autor:
Cheng Ju Ling, Tseng Hsiao Hsuan, Ademir de Souza Pereira, Bruno dos Santos Simões, Dália Melissa Conrado
Publikováno v:
Revista Insignare Scientia, Vol 7, Iss 3 (2024)
Diante dos inúmeros desafios socioambientais, nota-se a importância da formação ética, sobretudo no contexto do ensino de ciências. A educação ciência-tecnologia-sociedade-ambiente (CTSA) proporciona oportunidades para explorar explicitament
Externí odkaz:
https://doaj.org/article/501c46842a854731a2501d2f885788e0
Publikováno v:
In Journal of Alloys and Compounds 15 November 2024 1005
Autor:
Zhao, Pengfei, Song, Yilin, Hu, Zhipeng, Zhong, Zihan, Li, Yi, Zhou, Kui, Qin, Tingting, Yan, Yan, Hsu, Hsiao-Hsuan, Han, Su-Ting, Roy, Vellaisamy A.L., Kuo, Chi-Ching, Zhou, Ye
Publikováno v:
In Nano Energy November 2024 130
Autor:
Wang, Ming, Wang, Hsiao-Hsuan, Koralewski, Tomasz E., Grant, William E., White, Neil, Hanan, Jim, Grimm, Volker
Publikováno v:
In Ecological Modelling November 2024 497
Autor:
Chiang, Chao-Ching a, ⁎, Li, Jian-Sian a, Wan, Hsiao-Hsuan a, Ren, Fan a, Pearton, Stephen J. b
Publikováno v:
In Diamond & Related Materials February 2025 152