Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Hsiang-Szu Chang"'
Autor:
Naseem, Zohauddin Ahmad, Yan-Min Liao, Rui-Lin Chao, Po-Shun Wang, Yi-Shan Lee, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, Hung-Shiang Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 4, p 98 (2021)
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://doaj.org/article/ba4f992a877141209d623481cb3d3b35
Autor:
Hsiang-Szu Chang, 張翔思
97
This thesis investigates the single photon emission properties of three kinds of InxGa1-xAs self-assembled quantum dots - quantum dots embedded in planar GaAs, quantum dots grown on apex plane of a pyramid-like multifaceted structure and quan
This thesis investigates the single photon emission properties of three kinds of InxGa1-xAs self-assembled quantum dots - quantum dots embedded in planar GaAs, quantum dots grown on apex plane of a pyramid-like multifaceted structure and quan
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/t368a2
Autor:
null Naseem, Po-Shun Wang, Zohauddin Ahmad, Syed Hasan Parvez, Sean Yang, H.-S. Chen, Hsiang-Szu Chang, Jack Jia-Sheng Huang, Jin-Wei Shi
Publikováno v:
Journal of Lightwave Technology. 40:7893-7900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c5ecd96e8e5ec640278bf62016cfc31
https://doi.org/10.1109/jlt.2022.3204743
https://doi.org/10.1109/jlt.2022.3204743
Autor:
Zohauddin Ahmad, Jack Jia-Sheng Huang, Jin-Wei Shi, Sheng-Yun Wang, Yu-Heng Jan, Naseem, H. S. Chen, Hsiang-Szu Chang, Yan-Min Liao, Po-Shun Wang, Emin Chou, Sean Yang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
In this work, a novel In0.52Al0.48As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with a special p-side up etched mesa structure to zero the electric (E)-field at the periphery of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48011ef12f5066d378800def6d55f441
https://doi.org/10.1109/jstqe.2021.3111895
https://doi.org/10.1109/jstqe.2021.3111895
Autor:
null Naseem, Nan-Wei Chen, Syed Hasan Parvez, Zohauddin Ahmad, Sean Yang, H.-S. Chen, Hsiang-Szu Chang, Jack Jia-Sheng Huang, Jin-Wei Shi
Publikováno v:
2023 Optical Fiber Communications Conference and Exhibition (OFC).
Flip-chip bonding APDs with 14µm window diameters are demonstrated. Wide-bandwidth (36GHz), high-responsivity (3.4A/W), low dark current (175nA) and high MMW output power (-1dBm at 40GHz) can be achieved simultaneously with 12.5mA Isat under 0.9Vbr.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::875f5744a087b123abc34fefe13e8111
https://doi.org/10.23919/ofc49934.2023.10116642
https://doi.org/10.23919/ofc49934.2023.10116642
Publikováno v:
IET Nanodielectrics, Vol 4, Iss 1, Pp 21-26 (2021)
Avalanche photodiode (APD) is an indispensable receiver component because of its high bandwidth and low noise performance. Recently, APD reliability, under harsh environmental stresses such as high heat and humidity, has drawn great interest in the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d5e8abe9a36a3d28569f0663ba37069
https://doaj.org/article/77e721bf893e4fd7be89421ca81ec36c
https://doaj.org/article/77e721bf893e4fd7be89421ca81ec36c
Autor:
Hung Shiang Chen, Emin Chou, Sheng Yun Wang, Yi Shan Lee, Naseem, Jack Jia Sheng Huang, Yu Heng Jan, Zohauddin Ahmad, Sean Yang, Po Shun Wang, Yan Min Liao, Hsiang Szu Chang, Rui Lin Chao, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 98, p 98 (2021)
Photonics
Volume 8
Issue 4
Photonics
Volume 8
Issue 4
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869737605f06a726712e3cc4de06c264
https://www.mdpi.com/2304-6732/8/4/98
https://www.mdpi.com/2304-6732/8/4/98
Autor:
Nassem Nassem, Sheng-Yun Wang, Jack Jia-Sheng Huang, Emin Chou, Hsiang-Szu Chang, Yu-Heng Jan, Jin-Wei Shi, Sean Yang, H. S. Chen
Publikováno v:
OFC
High-speed/power APDs with novel etched-mesa structure are demonstrated to suppress edge breakdown. With 24μm diameters, they achieve 21GHz bandwidths, 5.5A/W responsivity, and RF saturation power over +5 dBm (10 GHz) under 8mA photocurrent and 0.9V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e2917e894f29a485556c7c89ac0f4d
https://doi.org/10.1364/ofc.2021.f2c.5
https://doi.org/10.1364/ofc.2021.f2c.5
Autor:
Jin-Wei Shi, Hsiang-Szu Chang, Nassem, Emin Chou, Jack Jia-Sheng Huang, Rui-Lin Chao, C. J. Ni, H. S. Chen, Yu-Heng Jan
Publikováno v:
OFC
UTC-PD with type-II GaAs0.5Sb0.5/In0.53Ga0.47As hybrid absorber integrated with substrate lens is demonstrated with high responsivity (0.95A/W) and wide O-E bandwidth (33GHz) at 1310 nm wavelength. High-sensitivity (-10dBm OMA) is realized in 400G le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db61bf06c38fd838655e50074518ae4
https://doi.org/10.1364/ofc.2020.w4g.5
https://doi.org/10.1364/ofc.2020.w4g.5
Autor:
H. S. Chen, Hsiang-Szu Chang, Song-Lin Wu, C. J. Ni, Yu-Heng Jan, Naseem, Emin Chou, N.-W. Wang, Rui-Lin Chao, Jhih-Min Wun, Jin-Wei Shi, Jack Jia-Sheng Huang
Publikováno v:
Journal of Lightwave Technology. 36:5505-5510
High-speed top-illuminated avalanche photodiodes (APDs) with large diameters (25 μ m) are demonstrated for the application of 4-channels 100 Gb/s data rate. They achieve a bandwidth of 17 GHz at low-gain (MG = 6.2; 3.6 A/W) and large-gain bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c28ecdb37695178fc1b5d3c663a4bc
https://doi.org/10.1109/jlt.2018.2876168
https://doi.org/10.1109/jlt.2018.2876168