Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Hsiang-Jen Huang"'
Autor:
K. Sharma, Thomas J. Haigh, Dennis M. Hausmann, James J. Demarest, Peethala Cornelius Brown, Paul C. Lemaire, James Chingwei Li, Arpan Mahorowala, Hosadurga Shobha, Hsiang-Jen Huang, Balasubramanian S. Pranatharthi Haran, Son V. Nguyen, P. Ramani
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selectiv
Autor:
O. van der Straten, Scott DeVries, H. Seo, Motoyama Koichi, J. Maniscalco, Kisik Choi, Hsiang-Jen Huang, T. Shen, T. Wu, T. Bae, Nicholas A. Lanzillo, Kyu-Charn Park, Kangguo Cheng, S. Hosadurga, Terry A. Spooner
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
It has been confirmed that Co diffusion from the cap into a Ru liner (resulting in Co depletion at the top of Cu lines) is the root cause of EM degradation for Cu interconnects in the case of using a combination of Ru liner and selective Co cap. Incr
Autor:
Hsiang-Jen Huang, Roey Shaviv, Lee Joung Joo, Balasubramanian S. Pranatharthi Haran, Nicolas Loubet, Suketu A. Parikh, A. Simon, Takeshi Nogami, S. Reidy, Rong Tao, M. Gage, Nicholas A. Lanzillo, M. Stolfi, Prasad Bhosale
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We demonstrate a design-technology co-optimization (DTCO) solution for enabling novel composite interconnects in next-generation high-performance computing (HPC) applications. Minimum-pitch signal line optimization with aggressively shrunk feature si
Autor:
C.-C. Yang, Terry A. Spooner, James Chingwei Li, J. Maniscalco, Hosadurga Shobha, Griselda Bonilla, Motoyama Koichi, Hsiang-Jen Huang, Takeshi Nogami, Theodorus E. Standaert, Nicholas A. Lanzillo
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
The impacts of ruthenium and cobalt liners on copper resistivity have been investigated at beyond 7nm dimensions. Liner metal conduction was carefully evaluated in a Cu resistivity derivation using the temperature coefficient of resistivity (TCR) app
Autor:
Hsiang-Jen Huang
Publikováno v:
Journal of Applied Physics; 8/15/2000, Vol. 88 Issue 4, p1831, 7p, 3 Charts, 9 Graphs
Publikováno v:
Journal of Applied Physics. 89:5133-5137
Strained boron-doped Si1−xGex layers with different Ge mole fractions were selectively deposited by ultrahigh vacuum chemical molecular epitaxy to form shallow p+-n junction suitable for raised source/drain metal–oxide–semiconductor field effec
Autor:
Hsiang-Jen Huang, Guo-Wei Huang, Kun-Ming Chen, Tiao-Yuan Huang, Chao-Hsin Chien, Chun-Yen Chang, Tien-Sheng Chao
Publikováno v:
IEEE Transactions on Electron Devices. 48:1627-1632
P-channel metal-oxide-semiconductor field-effect transistors with Si/sub 1-x/Ge/sub x/ raised source and drain (RSD) have been fabricated and further studied for low temperature applications. The Si/sub 1-x/Ge/sub x/ RSD layer was selectively grown b
Autor:
Kun-Ming Chen, Tiao-Yuan Huang, Liang-Po Chen, Chun-Yen Chang, Hsiang-Jen Huang, Guo-Wei Huang
Publikováno v:
Journal of Applied Physics. 88:1831-1837
As the transistors continue to scale down, the characteristics of high-temperature-sputtered Co/Si1−xGex junction have received lots of attention because of its potential applications to heterojunction bipolar transistors. In this study, we have fa
Autor:
C. S. Ku, H. Y. Lee, Wei-Kuo Chen, Hsiang-Jen Huang, Wei Hsin Chen, Wen-Cheng Ke, N. E. Tang, J. M. Peng, Ming Chih Lee
Publikováno v:
Journal of Applied Physics. 95:2172-2174
We have studied optical properties of V-shaped pits on Al0.16Ga0.84N. The microphotoluminescence spectrum from the pit center shows a broader and stronger emission at 350 nm than the near-band-edge emission at 336 nm from nonpit regions. The results
Autor:
Ming Chih Lee, Wei-Kuo Chen, Hsin Yi Lee, J. Q. Xiao, Wei Hsin Chen, Hsiang-Jen Huang, H. M. Chung, C. S. Ku
Publikováno v:
Journal of Applied Physics. 92:4129-4131
Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation in