Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Hsiang-Chun Wang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 318-323 (2022)
This paper presented a AlGaN/GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates with a Si doped barrier layer were fabricated for high power application. Compared with the conventional SBDs, the SBDs with doped barrier layer have the
Externí odkaz:
https://doaj.org/article/b2525cb402274ceca583558c4b0a8bd4
Autor:
Hsiang-Chun Wang, Yuehua Hong, Zhangwei Chen, Changshi Lao, Youming Lu, Zhichao Yang, Youhua Zhu, Xinke Liu
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing Ag nanoparticles (NPs) were deposited on the inkjet printing ZnO UV photodetector f
Externí odkaz:
https://doaj.org/article/52ae5010e1484bf8b63ca52becd47cff
Autor:
Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 229-234 (2020)
Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an Al
Externí odkaz:
https://doaj.org/article/362d5c3672b344629959f2ae3d9e6b1c
Autor:
Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1554 (2022)
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silv
Externí odkaz:
https://doaj.org/article/c5a9587733df45609b8f5c0d64b2b60a
Publikováno v:
Micromachines, Vol 13, Iss 5, p 807 (2022)
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resista
Externí odkaz:
https://doaj.org/article/0521a0ae7bd04f96b064c35ce11a0c8a
Autor:
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 201-206 (2018)
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the comp
Externí odkaz:
https://doaj.org/article/ad76f462abe444c888b25f5083f35c30
Autor:
Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 825-829 (2018)
This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate t
Externí odkaz:
https://doaj.org/article/885228ade1b04a168d4c5b585890d0a2
Autor:
Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Publikováno v:
Membranes, Vol 11, Iss 11, p 848 (2021)
In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the
Externí odkaz:
https://doaj.org/article/49ca62e52e804ee3b70050b53afafe78
Autor:
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Publikováno v:
Membranes, Vol 11, Iss 10, p 727 (2021)
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selecte
Externí odkaz:
https://doaj.org/article/cde577e1978b498689bb27dddd3f8e06
Autor:
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen
Publikováno v:
Micromachines, Vol 12, Iss 5, p 509 (2021)
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of nor
Externí odkaz:
https://doaj.org/article/b8b5f752cffc44528d480ef4a10bf827