Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hsiang-Chou Liao"'
Autor:
Hsiang-Chou Liao, 廖翔舟
96
First part of this dissertation is to study the crosslink reaction between PBAT and MA in order to apply to the study of the biodegradable membrane by analyzing the physical property, chemical property and biolysis of the membrane after addin
First part of this dissertation is to study the crosslink reaction between PBAT and MA in order to apply to the study of the biodegradable membrane by analyzing the physical property, chemical property and biolysis of the membrane after addin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/30349848572644601507
Autor:
Ling Wu Yang, Chi-Min Chen, Tahone Yang, Rong Lv, Chih-Yuan Lu, Hsiang-Chou Liao, Tuung Luoh, Kuang Chao Chen
Publikováno v:
ECS Transactions. 60:881-885
The defect inspection results for advanced technology nodes have extremely high defect counts frequently. Therefore, the defect review Pareto get high false rate due to the SEM non-visual defects, nuisance defects, or dummy fill patterns by tradition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50e7dff1523fb52ab5c5d25fa01dc6f
https://doi.org/10.1149/06001.0881ecst
https://doi.org/10.1149/06001.0881ecst
Autor:
Rong Lv, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu, Ling-Wu Yang, Tuung Luoh, Hsiang-Chou Liao, Chi-Min Chen
Publikováno v:
ECS Transactions. 60:279-283
As device rule shrinks, the finding of systematic hot spots is no longer just relied on design rule checking (DRC) and lithography rule checking (LRC). There still have some unexpected systematic hot spots impact the yield of production. Using image
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb9f5259ea234980a6f85c1ac8c33e5
https://doi.org/10.1149/06001.0279ecst
https://doi.org/10.1149/06001.0279ecst
Autor:
Ling-Wu Yang, Chih-Yuan Lu, Tahone Yang, Kuang-Chao Chen, Hsiang-Chou Liao, Tuung Luoh, Che-Lun Hung
Publikováno v:
ECS Transactions. 44:1207-1212
The inspection strategy and technique of high aspect ratio contact modules are demonstrated in this paper. Pre-scan with dark or bright field inspection then reviewing by Vcap condition at contact opening layer is to confirm the HAR contact patternin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b106908c5fec2311f5e5d0bbb65049
https://doi.org/10.1149/1.3694449
https://doi.org/10.1149/1.3694449
Autor:
Ling-Wu Yang, Kuang-Chao Chen, Po-Chou Chen, Tahone Yang, Chih-Yuan Lu, Hsiang-Chou Liao, Tuung Luoh
Publikováno v:
ECS Transactions. 44:641-646
Process window simulation results are implemented into a yield drop case induced by ILD contact module process shift. Signatures of blind voltage contrast and ILD thickness variation coincide with failure map of wafer sort. Lower down the edge pressu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1324c7f3c0ed021c6f75f078a62675c2
https://doi.org/10.1149/1.3694381
https://doi.org/10.1149/1.3694381
Autor:
Kuang-Chao Chen, Yi-Lung Fang, Tahone Yang, Ling-Wu Yang, Hsiang-Chou Liao, Tuung Luoh, Siao-Ling Li
Publikováno v:
2015 China Semiconductor Technology International Conference.
Generally CD (critical dimension) measurement is an important role for verify the FEM (Focus Exposure Matrix) process window. However, the generally CD measurement is rough due to only measure few site in wafer. The results cannot get the high accura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5726ddf725ae8379a2325e66a0e5386
https://doi.org/10.1109/cstic.2015.7153354
https://doi.org/10.1109/cstic.2015.7153354
Autor:
Olivier Moreau, Ivan Yao, Kuang-Chao Chen, Tuung Luoh, Alex Cheng, Hsiang-Chou Liao, Ling-Wu Yang, SiYeul Yoon, Tahone Yang, Chih-Yuan Lu, Hong Xiao, Steve Lin
Publikováno v:
2013 e-Manufacturing & Design Collaboration Symposium (eMDC).
In this paper we studied capturing buried void defects in copper (Cu) wires using an electron beam inspection (EBI) system. These are defects of interest (DOI) to integrated circuit (IC) manufacturers because typical defect inspection techniques cann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf0ee31ce0f2e1e2d45776865df1754
https://doi.org/10.1109/emdc.2013.6756067
https://doi.org/10.1109/emdc.2013.6756067
Autor:
Chih-Yuan Lu, Tuung Luoh, Ling-Wu Yang, Hsiao-Leng Li, Tahone Yang, Hsiang-Chou Liao, Kuang-Chao Chen
Publikováno v:
2013 e-Manufacturing & Design Collaboration Symposium (eMDC).
The different inspection methodologies in e beam are put together to compare their inspection performance on irregularly periphery via plugs. The results demonstrate hot spot inspection mode has better alignment performance and higher sensitivity tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae285b8785028d77c63a05149a8a874
https://doi.org/10.1109/emdc.2013.6756063
https://doi.org/10.1109/emdc.2013.6756063
Autor:
Rong Lv, ChengHua Yang, Chih-Yuan Lu, Hsiang-Chou Liao, Donghua Liu, Chi-Min Chen, Ling-Wu Yang, Tuung Luoh, Jeff Fan, Kuang-Chao Chen, Tahone Yang
Publikováno v:
2013 e-Manufacturing & Design Collaboration Symposium (eMDC).
Yield impacting systematic defects finding is no longer just relied on Design Rule Checking (DRC) provided by designer or Lithography Rule Checking (LRC) provided by post-optical proximity correction (OPC) results. An inspection flow is proposed in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd836ea2e30411cd013b5c786ccb8de
https://doi.org/10.1109/emdc.2013.6756065
https://doi.org/10.1109/emdc.2013.6756065
Autor:
Kuang-Yeu Hsieh, Ling-Wu Yang, Tahone Yang, Guan-Ru Lee, Kuang-Chao Chen, Hsiang-Chou Liao, Chih-Yuan Lu, Yen-Hao Shih, Rich Liu, Hang-Ting Lue, Yi-Chin Chen, Tuung Luoh
Publikováno v:
2012 e-Manufacturing & Design Collaboration Symposium (eMDC).
Various three-dimensional (3D) multilayer stacks NAND flash architectures are developed by several companies, the defect performance monitoring under such complicated architectures has become a new challenge in 3D NAND flash. The aim of this paper is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0758a16f0e5d90bdff8146ffbad058f4
https://doi.org/10.1109/emdc.2012.6338433
https://doi.org/10.1109/emdc.2012.6338433