Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hsiang-Chih Sun"'
Autor:
Cejun Wei, Jiang Li, Y. Tkachenko, Peter J. Zampardi, Andre G. Metzger, Lance G. Rushing, Bin Li, Yu Zhu, K.P. Weller, A. Klimashov, Ravi Ramanathan, Hsiang-Chih Sun, C. Cismaru, Hongxiao Shao
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:2137-2148
The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355a9858d4d985c72c4bc9fac85f20c9
https://doi.org/10.1109/jssc.2007.904318
https://doi.org/10.1109/jssc.2007.904318
Autor:
Hsiang-Chih Sun, M. Ohe, K. Katoh, T. Nguyen, R. Ramanathan, D. Barone, R.L. Hubbard, K. Hicks, H. Ly, J. Yota
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 20:323-332
Photosensitive polybenzoxazole (PBO) film has been used in GaAs heterojunction bipolar transistor (HBT) technology for stress buffer and mechanical protection layer applications. However, this film needs to be cured at high temperatures for a long pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af75bb700bf9efa2a821476c9f509db7
https://doi.org/10.1109/tsm.2007.901410
https://doi.org/10.1109/tsm.2007.901410
Publikováno v:
1995 53rd Annual Device Research Conference Digest.
We report a novel bandgap-engineered DHBT that (i) eliminates the current-blocking potential barrier between the base and the collector, and (ii) injects hot electrons into the collector at room temperature. Using a Ga/sub 0.47/In/sub 0.53/As/Al/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be8d6b24471f3721f3b110bb8a766af
https://doi.org/10.1109/drc.1995.496280
https://doi.org/10.1109/drc.1995.496280
Autor:
Hsiang-Chih Sun, N.X. Nguyen, Mary Chen, Chanh Nguyen, U. Mishra, David B. Rensch, Takyiu Liu
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25ab98a4460796ec6f307a0be878ccf1
https://doi.org/10.1109/cornel.1995.482552
https://doi.org/10.1109/cornel.1995.482552
Publikováno v:
Proceedings of International Electron Devices Meeting.
We report the performance of an InP-based DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice. The elimination of the potential barrier at the base-collector junction has been achieved by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3970713483b8362ef41f4215334882e7
https://doi.org/10.1109/iedm.1995.499338
https://doi.org/10.1109/iedm.1995.499338
Publikováno v:
Proceedings of International Electron Devices Meeting; 1995, p799-802, 4p
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1995, p552-562, 11p
Autor:
Yota, Jiro, Ly, Hoa, Ramanathan, Ravi, Hsiang-Chih Sun, Barone, Dragana, Thinh Nguyen, Katoh, Kohji, Ohe, Masayuki, Hubbard, Robert L., Hicks, Keith
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Aug2007, Vol. 20 Issue 3, p323-332, 10p, 5 Black and White Photographs, 7 Diagrams, 1 Chart, 9 Graphs
Publikováno v:
IEEE Electron Device Letters; 1996, Vol. 17 Issue 3, p133-135, 3p
Publikováno v:
1995 53rd Annual Device Research Conference Digest; 1995, p82-83, 2p