Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hsiang Ting Hung"'
Autor:
Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f395ee07600ffcb55a1e9ea8ce0081c
https://doi.org/10.1109/wipda56483.2022.9955268
https://doi.org/10.1109/wipda56483.2022.9955268
Autor:
Chien-Chung Hung, Yao-Feng Huang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Chwan-Ying Lee, Lurng-Shehng Lee
Publikováno v:
Materials Science Forum. 897:533-536
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e27bcec5d554605826be314caa2cc1
https://doi.org/10.4028/www.scientific.net/msf.897.533
https://doi.org/10.4028/www.scientific.net/msf.897.533
Autor:
Cheng-Tyng Yen, Fu-Jen Hsu, Yao Feng Huang, Lurng Shehng Lee, Chien Chung Hung, Pei Ju Chuang, Heng Yuan Lee, Hsiang Ting Hung, Chwan Ying Lee, Chi-Yin Cheng
Publikováno v:
Materials Science Forum. 858:595-598
MOSFETs and MOS capacitors (MOSCAPs) have been fabricated on Si-face of 4H-SiC to investigate the negative bias temperature instability (NBTI) characteristics of SiC MOSFETs. The shifts of threshold voltage of MOSFETs ranged from -216mV to -1257mV af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3c43e8d776e24a27da3a5aa39bd4df
https://doi.org/10.4028/www.scientific.net/msf.858.595
https://doi.org/10.4028/www.scientific.net/msf.858.595
Autor:
Yao Feng Huang, Tzu Ming Yang, Chien Chung Hung, Lurng Shehng Lee, Hsiang Ting Hung, Chwan Ying Lee, Cheng-Tyng Yen, Chi-Yin Cheng
Publikováno v:
Materials Science Forum. :729-732
The influences of positive fixed oxide charges and donor-like interface traps on breakdown voltages of SiC devices with FGR and JTE terminations were studied. The breakdown voltages of devices with both FGR and JTE terminations were found to degrade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92892c6e3e78f54ff8edfb6e101846a3
https://doi.org/10.4028/www.scientific.net/msf.821-823.729
https://doi.org/10.4028/www.scientific.net/msf.821-823.729
Autor:
Chwan-Ying Lee, Pei-Ju Chuang, Cheng-Tyng Yen, Fu-Jen Hsu, Hsiang-Ting Hung, Tzong-Liang Chen, Yao-Feng Huang, Lurng-Shehng Lee, Chien-Chung Hung
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) is proposed in this paper, which merged a double implanted MOSFET (DMOS) and junction barrier controlled Schottky diode (JBS) in a monolithic SiC device wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bdcd1b789f66cb2c8d24522c34b26ba
https://doi.org/10.23919/ispsd.2017.7988889
https://doi.org/10.23919/ispsd.2017.7988889
Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping
Autor:
Lurng-Shehng Lee, Fu-Jen Hsu, Chwan-Ying Lee, Chien-Chung Hung, Cheng-Tyng Yen, Hsiang-Ting Hung, Yao-Feng Huang
Publikováno v:
Applied Physics Letters. 108:012106
We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed537685846a7ab390eb67efc816ad0
https://doi.org/10.1063/1.4939553
https://doi.org/10.1063/1.4939553
Autor:
Cheng-Tyng Yen, Chien-Chung Hung, Hsiang-Ting Hung, Chwan-Ying Lee, Lurng-Shehng Lee, Yao-Feng Huang, Fu-Jen Hsu
Publikováno v:
Applied Physics Letters; 1/1/2016, Vol. 108 Issue 1, p1-4, 4p, 1 Diagram, 6 Graphs