Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hsi-Wen Liu"'
Autor:
Yu-Ting Su, Hsi-Wen Liu, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan, Cheng-Hsien Wu, Chih-Cheng Yang, Min-Chuan Wang, Shengdong Zhang, Hao Wang, Simon M. Sze
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 341-345 (2018)
In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing t
Externí odkaz:
https://doaj.org/article/22fe792bb7c64ceb98d62892a541b82a
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Jih-Chien Liao, Ting-Chang Chang, Wei-Ren Syong, Kai-Chun Chang, Ying-Hsin Lu, Hsi-Wen Liu, Chien-Yu Lin, Li-Hui Chen, Fu-Yuan Jin, Yu-Hsuan Chen, Chen-Hsin Lien, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://doaj.org/article/fc94dd4ed6f6434084103894f7b2bc91
Autor:
Hsi-Wen Liu, 劉錫紋
107
Metal-oxide-semiconductor-field-effect transistors (MOSFETs) have the advantages of low manufacturing cost, low power consumption and easy scaling down. They are widely used in the IC industry, and the MOSFETs continue to shrink with the Moo
Metal-oxide-semiconductor-field-effect transistors (MOSFETs) have the advantages of low manufacturing cost, low power consumption and easy scaling down. They are widely used in the IC industry, and the MOSFETs continue to shrink with the Moo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r9ts9h
Autor:
Shengdong Zhang, Hsi-Wen Liu, Chung-I Yang, Ting-Chang Chang, Guan-Fu Chen, Ying-Hsin Lu, Shin-Ping Huang, Yu-Xuan Wang, Wu-Ching Chou, Chien-Yu Lin, Yu-Zhe Zheng, Bo-Wei Chen, Yu-Shan Lin, Po-Yung Liao
Publikováno v:
IEEE Transactions on Electron Devices. 65:533-536
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a30a67daa978dc5bc193c296fd246cd7
https://doi.org/10.1109/ted.2017.2786144
https://doi.org/10.1109/ted.2017.2786144
Autor:
Min-Chuan Wang, Simon M. Sze, Hao Wang, Chih-Cheng Yang, Po-Hsun Chen, Cheng-Hsien Wu, Chih-Hung Pan, Hsi-Wen Liu, Tian-Jian Chu, Shengdong Zhang, Yu-Ting Su, Ting-Chang Chang, Tsung-Ming Tsai
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 341-345 (2018)
In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b12ff8ce29c4c22bfc5ae777b80034a
https://ieeexplore.ieee.org/document/8301397/
https://ieeexplore.ieee.org/document/8301397/
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Yu-Hsuan Chen, Fu-Yuan Jin, Chien-Yu Lin, Yi-Han Ye, Wei-Ren Syong, Hsi-Wen Liu, Cheng Tung Huang, Chenhsin Lien, Ting-Chang Chang, Osbert Cheng, Kai-Chun Chang, Ying-Hsin Lu, Jih-Chien Liao, Li-Hui Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::677fb013903b33f39a5926eca4aeb966
https://doi.org/10.1109/jeds.2018.2850063
https://doi.org/10.1109/jeds.2018.2850063
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
Autor:
Ying-Hsin Lu, Kuan-Ju Liu, Jyun Yu Tsai, Ching-En Chen, Li-Hui Chen, Chien-Yu Lin, Yu-Shan Lin, Hsi-Wen Liu, Jin-Chien Liao, Ting-Chang Chang, Fong-Min Ciou
Publikováno v:
Thin Solid Films. 644:41-44
This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I CP ) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I CP second
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c979ccac55c39a02391974168ebce1
https://doi.org/10.1016/j.tsf.2017.09.052
https://doi.org/10.1016/j.tsf.2017.09.052
Autor:
Chien-Yu Lin, Cheng Tung Huang, Ying Hsin Lu, Hsi Wen Liu, Ching-En Chen, Kuan Ju Liu, Jyun Yu Tsai, Ting-Chang Chang, Osbert Cheng, Tseung-Yuen Tseng
Publikováno v:
Thin Solid Films. 620:30-33
This research studies the effects of post-metal deposition annealing temperature on degradation induced by positive bias stress (PBS) in TiN/HfO2 n-channel fin field-effect transistors (FinFETs). The initial electrical characteristics possess higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab39a748b390772e1b62abc325535b9
https://doi.org/10.1016/j.tsf.2016.08.072
https://doi.org/10.1016/j.tsf.2016.08.072
Autor:
Hsi-Wen Liu
Publikováno v:
Proceedings of EuroCogSci 03 ISBN: 9781315782362
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5120a8dd49e709972d209ece8d63f304
https://doi.org/10.4324/9781315782362-117
https://doi.org/10.4324/9781315782362-117
Autor:
Hsi-wen Liu
Publikováno v:
Proceedings of the Twenty-Fourth Annual Conference of the Cognitive Science Society ISBN: 9781315782379
Language-Like Representation in Embodied and Situated Cognition: A Case Study of a Situated Robot’s Planning Hsi-wen Liu (hwliu@pu.edu.tw) Division of Humanities, Providence University 200 Chung-Chi Rd, Shalu, Taichung County 433, Taiwan Interests
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa9d47212e8b1033ac68b738f6695a7
https://doi.org/10.4324/9781315782379-234
https://doi.org/10.4324/9781315782379-234