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pro vyhledávání: '"Hseuh‐Chuan Lee"'
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:326-331
In this paper, we describe a technique for high-quality interface passivation of n-type crystalline silicon wafers through the growth of hydrogenated amorphous Si (a-Si:H) thin layers using conventional plasma-enhanced chemical vapor deposition. We i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afc499fc0e8584f5964d5625e021019
https://doi.org/10.1002/pip.1189
https://doi.org/10.1002/pip.1189
