Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hsby Li"'
Publikováno v:
Journal of Crystal Growth. 425:376-380
The effects of well widths and well numbers of InGaAs triangular quantum well lasers in 2.30–2.44 μm range using antimony-free material system on InP substrates are investigated. The triangular quantum well was equivalently formed by using gas sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ac6c2dd306502569a7d7500573faf8
https://doi.org/10.1016/j.jcrysgro.2015.02.091
https://doi.org/10.1016/j.jcrysgro.2015.02.091
Publikováno v:
Journal of Crystal Growth. 425:346-350
The impact of buffer schemes on the strain relaxation and structural characteristics of In 0.83 Ga 0.17 As photodetector structures with relatively high lattice mismatch (5.9%) grown on GaAs substrate by gas source molecular beam epitaxy has been inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c40fa2ef3ec1a3d44edc80212c3f45bb
https://doi.org/10.1016/j.jcrysgro.2015.02.102
https://doi.org/10.1016/j.jcrysgro.2015.02.102
Publikováno v:
Journal of Crystal Growth. 425:337-340
InP-based high indium content In 0.83 Ga 0.17 As photodetector structures with lattice mismatch up to 2.1% have been grown by gas source molecular beam epitaxy system. The photodetectors using continuously graded and step-graded In x Al 1−x As buff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdd81dd9439354fbb43b3e36ed7be853
https://doi.org/10.1016/j.jcrysgro.2015.03.040
https://doi.org/10.1016/j.jcrysgro.2015.03.040
Publikováno v:
Journal of Alloys and Compounds. 619:52-57
The effects of material parameters on the temperature dependent features of the spectral response of wavelength extended In 0.83 Ga 0.17 As photodetector have been investigated both experimentally and theoretically. The decline of the responsivity wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc32016a4f6b01e261cbc5e0733c346
https://doi.org/10.1016/j.jallcom.2014.08.257
https://doi.org/10.1016/j.jallcom.2014.08.257
Publikováno v:
Journal of Crystal Growth. 393:75-80
GaAs-based wavelength extending metamorphic In0.83Ga0.17As photodetector structures with cut-off wavelength around 2.5 μm and lattice mismatch up to 5.9% were grown by gas source molecular beam epitaxy. In this structure, continuously composition gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68335540d4f029f41e69847e997304f
https://doi.org/10.1016/j.jcrysgro.2013.11.083
https://doi.org/10.1016/j.jcrysgro.2013.11.083
Publikováno v:
Journal of Alloys and Compounds. 576:336-340
The absorption coefficients of high Indium content In 0.8 Ga 0.2 As at room temperature and 77 K have been obtained from transmission measurements by using the Fourier transformed infrared spectrometer. A high precision can be ensured for the deduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::236c2b29face84385d0ce9f7da42cbff
https://doi.org/10.1016/j.jallcom.2013.05.224
https://doi.org/10.1016/j.jallcom.2013.05.224
Publikováno v:
Journal of Crystal Growth. 378:579-582
InAlGaAs photodiodes with 50% cut-off wavelength of 1.41 μm at room temperature have been grown by using gas source MBE with convenient and reliable procedure, and the performances have been characterized in detail. The InAlGaAs absorption layer sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10373a3446764bff4ed2ec2a961a5ef5
https://doi.org/10.1016/j.jcrysgro.2012.12.159
https://doi.org/10.1016/j.jcrysgro.2012.12.159
Publikováno v:
Journal of Crystal Growth. 378:65-68
A variety of metamorphic InGaAs photodetector structures have been grown on InP substrates by gas source molecular beam epitaxy. Their characteristics have been measured by atomic force microscopy, X-ray diffraction and photoluminescence to investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a8a5e42d59b4a3640f624dcd39f791
https://doi.org/10.1016/j.jcrysgro.2012.12.049
https://doi.org/10.1016/j.jcrysgro.2012.12.049
Publikováno v:
Journal of Crystal Growth. 378:587-590
Effects of the injector doping densities on lasing properties of mid-infrared InAlAs–InGaAs–InP quantum cascade lasers at 4.3 μm have been studied. Lasers with different average injector doping between 1.29E17 cm −3 and 2.07E17 cm −3 have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6d12464af3c250adbe20d37de89627b
https://doi.org/10.1016/j.jcrysgro.2012.12.139
https://doi.org/10.1016/j.jcrysgro.2012.12.139
Autor:
Hsby Li, Yi Gu, Ying Jie Ma, Yong Gang Zhang, Xing You Chen, Su Ping Xi, Ben Du, Yuan Ying Cao, Ai Zhen Li, Li Zhou
Publikováno v:
Journal of Lasers, Optics & Photonics.
Zhang et al. efforts on the explore of InP-based Sb-free 2-3 μm band lasers and photodetectors are introduced, including the 2-2.5 μm band type I InGaAs MQW lasers under pseudomorphic triangle well scheme, 2.5-3.0 μm band type I InAs MQW lasers un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b339dbe8dcfa6d4531c8958e5722ebd4
https://doi.org/10.4172/2469-410x.1000126
https://doi.org/10.4172/2469-410x.1000126