In-Situ Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal

Autor: Vika V. Arzumanyan, Aram A. Sahakyan, Hrant N. Yeritsyan, V. Tsakanov, N.E. Grigoryan, Vachagan V. Harutyunyan, Gayane Amatuni, Bagrat Grigoryan

Publikováno v: Journal of Modern Physics. 10:1125-1133

The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45ae6e4024a22795899eb3cc301893a9
https://doi.org/10.4236/jmp.2019.109072

Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

Autor: Gayane Amatuni, Hrant N. Yeritsyan, Vachagan V. Harutyunyan, Bagrat Grigoryan, N.E. Grigoryan, Aram A. Sahakyan, Christopher J. Rhodes, Arsham Yeremyan

Publikováno v: Journal of Modern Physics. :1271-1280

This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d55ca4cb661401706a09196b950ecb9b
https://doi.org/10.4236/jmp.2018.96075

AREAL low energy electron beam applications in life and materials sciences

Autor: Gohar Tsakanova, L. R. Aloyan, Arsham Yeremyan, S. Sh. Tatikyan, M.V. Derdzyan, Gayane Amatuni, Rouben Aroutiounian, V.V. Harutiunyan, Norayr Martirosyan, Hakob Davtyan, Ashot Vardanyan, Vahagn Vardanyan, N.E. Grigoryan, V.V. Buniatyan, Bagrat Grigoryan, V. Tsakanov, Vahan Petrosyan, Vahe Sahakyan, S.G. Haroutyunian, Ashot Petrosyan, Aram A. Sahakyan, Laura Hakobyan, Avetis Simonyan, E. Tsovyan, Hrant N. Yeritsyan, Yeva B. Dalyan, Nelly Babayan, V.Sh. Avagyan, Gevorg Zanyan, L.G. Aslanyan, G.S. Melikyan, A.A. Sargsyan, K.L. Hovhannesyan, Vitali Khachatryan

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

The AREAL laser-driven RF gun provides 2–5 MeV energy ultrashort electron pulses for experimental study in life and materials sciences. We report the first experimental results of the AREAL beam application in the study of molecular-genetic effects

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ab0d8bdefc6f81cb86dfe725f891f47
https://doi.org/10.1016/j.nima.2016.02.028

Introduction rates of radiation defects in electron irradiated semiconductor crystals of n-Si and n-GaP

Autor: Christopher J. Rhodes, N.E. Grigoryan, Bagrat Grigoryan, Vika V. Arzumanyan, Gayane Amatuni, Aram A. Sahakyan, Vachagan V. Harutyunyan, Hrant N. Yeritsyan, V. Tsakanov

Publikováno v: Radiation Physics and Chemistry. 176:109056

A study was made of the introduction rate of radiation defects Δ N d e f / Δ D versus the fast electron irradiation dose ( D ) in semiconductor crystals of n-Si and n-GaP. We take the concentration of radiation defects concentration N d e f to be t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::98f10c7df0772c4f0cdb85a140aed340
https://doi.org/10.1016/j.radphyschem.2020.109056

The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO2 Structures

Autor: Hamlet S. Karayan, Aram A. Sahakyan, Hrant N. Yeritsyan, V.V. Harutunyan, Vahan A. Sahakyan

Publikováno v: Journal of Modern Physics. :1657-1662

The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::beea9493130ae6efcfae16fc69d704db
https://doi.org/10.4236/jmp.2015.611167