Local stress analysis in devices by FIB

Autor: Jan-Dirk Kamminga, Willem D. van Driel, Paul F. A. Alkemade, Hozan Miro, Rene Kregting, Sander Gielen

Publikováno v: 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE, 26-28 April 2010, Bordeaux, France

Intrinsic stresses in bondpads may lead to early failure of IC's. In order to determine the intrinsic stresses in semiconductor structures, a new procedure is set up. This procedure is a combined experimental/numerical approach which consists of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::200f78883f26241f828fb40b7676a601
https://doi.org/10.1109/esime.2010.5464520