Zobrazeno 1 - 10
of 182
pro vyhledávání: '"Hoyt, Judy"'
Autor:
Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L., Nayfeh, Hasan, Pitera, Arthur J., Hoyt, Judy L., Fitzgerald, Eugene A., Antoniadis, Dimitri A.
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point o
Externí odkaz:
http://hdl.handle.net/1721.1/3671
We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a modified Sho
Externí odkaz:
http://arxiv.org/abs/1603.06654
Autor:
Teherani, James T., Hoyt, Judy L.
We have developed a physically-intuitive method to calculate the local lattice constant as a function of position in a high-resolution transmission electron microscopy image by performing a two-dimensional fast Fourier transform. We apply a Gaussian
Externí odkaz:
http://arxiv.org/abs/1309.3155
Autor:
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Publikováno v:
In Solar Energy May 2014 103:154-159
Publikováno v:
In Thin Solid Films 2006 508(1):14-19
Autor:
Ní Chléirigh, Cáit, Wang, XiaoRu, Rimple, Gana, Wang, Yun, David Theodore, N., Canonico, Michael, Hoyt, Judy L.
Publikováno v:
Journal of Applied Physics; May2008, Vol. 103 Issue 10, p104501, 4p, 3 Diagrams, 5 Graphs
Publikováno v:
Journal of Applied Physics; 5/15/2007, Vol. 101 Issue 10, p104905, 5p, 3 Black and White Photographs, 3 Diagrams, 1 Graph
Publikováno v:
Journal of Applied Physics; 2/15/2007, Vol. 101 Issue 4, p044901-N.PAG, 11p, 1 Chart, 16 Graphs
Publikováno v:
Journal of Applied Physics; 8/1/1996, Vol. 80 Issue 3, p1567, 11p, 3 Diagrams, 2 Charts, 8 Graphs
Publikováno v:
Tunneling Field Effect Transistor Technology; 2016, p33-60, 28p