Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hoyeop Kweon"'
Autor:
Gucheol Jeong, Jaebuhm Suh, Ki-Soo Shin, Hoyeop Kweon, Yousung Kim, Sang-Don Lee, Seongjoon Lee, Jae-Sung Roh, Suock Jeong, Min Huh, Woncheol Cho, Hyunpil Noh
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
The first 8F/sup 2/ stack DRAM cell with 0.08 /spl mu/m/sup 2/ size has been successfully integrated by employing a poly plug scheme for landing plug contacts and W/poly gates and Ru MIM capacitors, of which cell working has been proven under easy fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9329efea91eafe969658d4f5701772
https://doi.org/10.1109/vlsit.2002.1015386
https://doi.org/10.1109/vlsit.2002.1015386
Autor:
Hyunpil Noh, Suock Jeong, Seongjoon Lee, Yousung Kim, Woncheol Cho, Min Huh, Gucheol Jeong, Jaebuhm Suh, Hoyeop Kweon, Jaesung Roh, Kisoo Shin, Sangdon Lee
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303); 2002, p56-57, 2p