Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hoyeol Yun"'
Autor:
Bjørn-Ove Fimland, Dong Chul Kim, A. Mazid Munshi, Jungtae Nam, Dong Hoon Shin, Keun Soo Kim, Sangwook Lee, Anjan Mukherjee, D L Dheeraj, Hoyeol Yun, Helge Weman
Publikováno v:
ACS Applied Materials & Interfaces. 11:13514-13522
We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical
Autor:
Seungjin Nam, Sangwook Lee, Helge Weman, Dong Chul Kim, Jungtae Nam, Wonki Lee, Hoyeol Yun, Jun Yeon Hwang, Dong Hoon Shin, Keun Soo Kim
Publikováno v:
Carbon. 111:733-740
Low-pressure chemical vapor deposition of graphene has been investigated on various Pt substrates such as e-beam deposited films, sputtered films, and polycrystalline foils. High temperature sputtering is found to be crucial in growing single layer g
Autor:
Jae Woo Lee, Min-Kyu Joo, Urszula Dettlaff-Weglikowska, Hoyeol Yun, Ho Kyun Jang, Junhee Choi, Gyu Tae Kim, Jun Eon Jin, Siegmar Roth, Sangwook Lee, Byung-Chul Lee, Ajeong Choi
Publikováno v:
ACS Applied Materials & Interfaces. 8:18513-18518
In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the c
Autor:
A. Mazid Munshi, Dong Chul Kim, Antonius T. J. van Helvoort, Junghwan Huh, Sangwook Lee, Hanne Kauko, Helge Weman, Hoyeol Yun, D L Dheeraj, Bjørn-Ove Fimland
Publikováno v:
Nano Letters. 15:3709-3715
Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex proces
Publikováno v:
Talanta. 168
We report a method of small molecule analysis using a converted graphene-like monolayer (CGM) plate and laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF MS) without organic matrices. The CGM plate was prepared from self-assembled
Publikováno v:
Journal of Applied Physics; Jul2010, Vol. 108 Issue 1, p014302, 5p, 5 Graphs
Autor:
Sangwook Lee, Roland Wiesendanger, O. Pietzsch, Suklyun Hong, Jong Kwon Lee, Gary P. Kennedy, Shiro Yamazaki, Urszula Dettlaff-Weglikowska, Jinwoo Park, Gyu Tae Kim, Siegmar Roth, Hoyeol Yun
Publikováno v:
Nano Letters. 13:3494-3500
A periodically modulated graphene (PMG) generated by nanopatterned surfaces is reported to profoundly modify the intrinsic electronic properties of graphene. The temperature dependence of the sheet resistivity and gate response measurements clearly s
Autor:
Duhee Yoon, Rodney S. Ruoff, Sangwook Lee, Hoyeol Yun, Hyeonsik Cheong, Seonyoung Jegal, Yufeng Hao
Publikováno v:
Chemical Physics Letters. :146-150
Crystallographic orientations of early multi-lobe graphene domains in CVD-grown graphene are investigated. Partially grown graphene domains were transferred onto flexible substrates and uniaxial tensile strain was applied. From the polarization depen
Autor:
Jonathan Ho, Eleanor E. B. Campbell, Jungho Park, Myeongjin Park, Seungmoon Pyo, Sangwook Lee, Miri Seo, Hoyeol Yun, Changhee Lee, Junghyun Lee
Publikováno v:
Park, J, Ho, J, Yun, H, Park, M, Lee, J H, Seo, M, Campbell, E E B, Lee, C, Pyo, S & Lee, S 2013, ' Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists ', Applied Physics A: Materials Science and Processing, vol. 111, no. 4, pp. 1051-1056 . https://doi.org/10.1007/s00339-012-7411-7
We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrode
Autor:
Haeyong Kang, Sangwook Lee, Jeong Gyun Kim, Yoojoo Yun, Dongseok Suh, Jeongmin Park, Nahee Park, Young Hee Lee, Joonggyu Kim, Hoyeol Yun, Thuy Kieu Truong
Publikováno v:
Nanotechnology. 26(34)
The combination of quantum Hall conductance and charge-trap memory operation was qualitatively examined using a graphene field-effect transistor. The characteristics of two terminal quantum Hall conductance appeared clearly on the background of a hug