Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Howard W. H. Lee"'
Autor:
Timothy E. Patten, Robin S. Tanke, Mark E. Thompson, Howard W. H. Lee, Katherine A. Pettigrew, Drew Murphy, Susan Kauzlarich
Publikováno v:
Chemistry of Materials. 15:1682-1689
Germanium nanoclusters of average diameter 4 nm were prepared with covalently bound termination groups. Chloride-terminated nanoclusters were reacted with a Grignard reagent to form acetal-containing surface-terminated nanoclusters. Treatment with ac
Autor:
A. V. Hamza, Thomas Schenkel, P.A. Thielen, Howard W. H. Lee, M. W. Newman, D. H. Schneider, J. W. McDonald
Publikováno v:
Hamza, A.V.; Newman, M.W.; Thielen, P.A.; Lee, H.W.H.; Schenkel, T.; McDonald, J.W.; et al.(2001). Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation. Applied Physics A, 76(3). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0tg5d5zv
The intense, ultra-fast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼2-eV band gap). The silicon surfaces were irradi
Autor:
Lousia J Hope-Weeks, Susan M. Kauzlarich, Boyd R. Taylor, Robert S. Maxwell, Glenn A. Fox, Howard W. H. Lee
Publikováno v:
Materials Science and Engineering: B. 96:90-93
Boyd R. Taylor *, Glenn A. Fox , Lousia J. Hope-Weeks , Robert S. Maxwell , Susan M. Kauzlarich , Howard W.H. Lee d a Chemistry and Chemical Engineering Division, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA b Analytical and Nucle
Publikováno v:
Journal of Cluster Science. 11:423-431
Photoluminescence (PL) from alkyl-terminated silicon nanocrystallites as a function of size has been studied. Ultraviolet–blue luminescence (390–410 nm) is observed from as-prepared silicon nanoclusters with diameters from 3 to 8 nm. After 1 h of
Autor:
R. Treusch, Louis J. Terminello, V. V. Dinh, Glenn A. Fox, T. van Buuren, Clemens Heske, Ignacio A. Jiménez, Howard W. H. Lee, F. J. Himpsel, K. Pakbaz, S. Kakar
Publikováno v:
Journal of Applied Physics. 86:88-93
Thin films of tris-(8, hydroxyquinoline) aluminum (Alq3) and N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) were measured using synchrotron radiation-based core and valence level photoemission and core level photoabso
Publikováno v:
Journal of the American Chemical Society. 121:5191-5195
We describe the synthesis and characterization of alkyl-capped nanocrystalline Si (R-n−Si) prepared by the reaction of SiCl4 with Mg2Si in ethylene glycol dimethyl ether (glyme) and surface-terminated with various alkyl groups, R-n−Si (R = methyl
Autor:
C. A. Smith, D. Cooke, Shailaja Mahamuni, B. S. Bendre, Valerie J. Leppert, Howard W. H. Lee, Subhash H. Risbud
Publikováno v:
Nanostructured Materials. 7:659-666
Highly stable, wurtzite quantum sized ZnO colloids encapsulated in polymers have been synthesized. The particles can be obtained in a powder form and are partially redissolvable in organic media. A shift in the optical absorption spectrum confirms qu
Publikováno v:
Chemical Physics Letters. 207:540-545
Recent results are reported from our study of a new class of transient electronic defects generated with ultraviolet (UV) photons in hydrogen-bonded molecular solids represented by isomorphs of dihydrogen phosphate. At room temperature, the defect fo
Autor:
Peter A. Thielen, J.W. McDonald, Micheal W. Newman, Thomas Schenkel, Alex V. Hamza, D. H. Schneider, Howard W. H. Lee
Publikováno v:
Applied Physics Letters. 79:2973-2975
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength (∼2 eV band gap). The silicon surfaces were
Autor:
Anirudha Barve, Subhash H. Risbud, Ian M. Kennedy, Amith K Murali, Valerie J. Leppert, Howard W. H. Lee
Publikováno v:
Nano Letters. 1:287-289
Nanoparticles of indium oxide, a transparent conducting oxide with a band gap close to GaN, were synthesized by pulsed laser ablation of a pure indium metal target. X-ray diffraction and transmission electron microscopy confirmed that nanocrystalline