Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hourani , Wael"'
Autor:
Dubois, Marc, Guérin, Katia, Ahmad, Yasser, Batisse, Nicolas, Mar, Maimonatou, Frezet, Lawrence, Hourani, Wael, Bubendorff, Jean-Luc, Parmentier, Julien, Hajjar-Garreau, Samar, Simon, Laurent
Publikováno v:
In Carbon October 2014 77:688-704
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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Autor:
Hourani, Wael, Rousselot, Christophe, N'Djoré, Kouamé Boko Joël-Igor, Billard, Alain, Arab Pour Yazdi, Mohammad, Makoudi, Younes
Publikováno v:
Electronic Materials; Dec2022, Vol. 3 Issue 4, p291-300, 10p
Autor:
Coraux, Johann1, Hourani, Wael2, Müller, Valentin L.1, Lamare, Simon2, Kamaruddin, Danial Aiman2, Magaud, Laurence1, Bendiab, Nedjma1, Den Hertog, Martien1, Leynaud, Olivier1, Palmino, Frank2, Salut, Roland2, Chérioux, Frédéric2 frederic.cherioux@femto-st.fr
Publikováno v:
Chemistry - A European Journal. 8/16/2017, Vol. 23 Issue 46, p10969-10973. 5p.
Autor:
Custovic, Irma, Hourani, Wael, Teyssieux, Damien, JEANNOUTOT, Judicaël, Feron, Michel, Makoudi, Younes, Palmino, Frank, Cherioux, Frédéric
Publikováno v:
European Materials Research Society
European Materials Research Society, Jun 2018, Strasbourg, France
European Materials Research Society, Jun 2018, Strasbourg, France
International audience; Abstract : The fabrication of robust and conjugated organic nano-architectures deposited on surfaces is a key-challenge in order to build smart components. Most of covalent nano-architectures are obtained by thermally-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c72dd3cc15f46e722e668ea5da134c32
https://hal.archives-ouvertes.fr/hal-02130174
https://hal.archives-ouvertes.fr/hal-02130174
Autor:
Coraux, Johann, Hourani, Wael, Muller, Valentin, Bendiab, Nedjma, Den Hertog, Martien, Salut, Roland, Cherioux, Frédéric
Publikováno v:
1st European Conference on Chemistry of Two-Dimensional Materials (Chem2DMat)
1st European Conference on Chemistry of Two-Dimensional Materials (Chem2DMat), Aug 2017, Strasbourg, France
1st European Conference on Chemistry of Two-Dimensional Materials (Chem2DMat), Aug 2017, Strasbourg, France
International audience; Conjugated two-dimensional (2D) materials are ultimately thin species, in which the hoping of charge carriers between neighboring atomic sites governs conduction. Graphene, which may be regarded as a giant conjugated molecule,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c6e07fa17c0669f15010dbd41b08220d
https://hal.archives-ouvertes.fr/hal-02300615
https://hal.archives-ouvertes.fr/hal-02300615
Autor:
Gautier, Brice, Martin, Simon, Hourani, Wael, Grandfond, Antonin, BABOUX, Nicolas, Albertini, David
Publikováno v:
Consultative Committee for Electricity and Magnetism workshop
Consultative Committee for Electricity and Magnetism workshop, Jan 2017, Paris, France
Consultative Committee for Electricity and Magnetism workshop, Jan 2017, Paris, France
23 mars 2017; International audience; no abstract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b597c6696fa54a65b98a0a56c79e9229
https://hal.archives-ouvertes.fr/hal-01701487
https://hal.archives-ouvertes.fr/hal-01701487
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Hourani, Wael
La miniaturisation de la structure de transistor MOS a conduit à l'amincissement de l’oxyde de grille. Ainsi, la dégradation et le claquage sous contrainte électrique est devenu l'un des problèmes de fiabilité les plus importants des couches m
Externí odkaz:
http://www.theses.fr/2011ISAL0109/document
Autor:
Hourani , Wael
Publikováno v:
Other. INSA de Lyon, 2011. English. ⟨NNT : 2011ISAL0109⟩
Other. INSA de Lyon, 2011. English. 〈NNT : 2011ISAL0109〉
Other. INSA de Lyon, 2011. English. 〈NNT : 2011ISAL0109〉
Miniaturization of the MOS transistor structure has led to the high thinning of the gate oxide. Hence, degradation and breakdown under electrical stress became one of the important reliability concerns of thin oxide films. The use of characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f557d96d9fbc16603c45b658a49c701
https://tel.archives-ouvertes.fr/tel-00952841
https://tel.archives-ouvertes.fr/tel-00952841