Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Houpeng Chen"'
Publikováno v:
Micromachines, Vol 14, Iss 7, p 1420 (2023)
A high-precision current-mode bandgap reference (BGR) circuit with a high-order temperature compensation is presented in this paper. In order to achieve a high-precision BGR circuit, the equation of the nonlinear current has been modified and the hig
Externí odkaz:
https://doaj.org/article/11828af967204b73bbb7d74325baac3d
Publikováno v:
Frontiers in Neurorobotics, Vol 16 (2022)
As information technology is moving toward the era of big data, the traditional Von-Neumann architecture shows limitations in performance. The field of computing has already struggled with the latency and bandwidth required to access memory (“the m
Externí odkaz:
https://doaj.org/article/2cf4f0ce260d4cc08607caf30a95f1fd
Publikováno v:
Sensors, Vol 22, Iss 23, p 9367 (2022)
In this paper, a fast-transient-response NMOS low-dropout regulator (LDO) with a wide load-capacitance range was presented to provide a V/2 read bias for cross-point memory. To utilize the large dropout voltage in the V/2 bias scheme, a fast loop con
Externí odkaz:
https://doaj.org/article/58a216ee45bd4093bc26ef3b8d758317
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1668 (2022)
A fully integrated low-dropout (LDO) regulator with improved load regulation and transient responses in 40 nm technology is presented in this paper. Combining adjustable threshold push–pull stage (ATPS) and master–slave power transistors topology
Externí odkaz:
https://doaj.org/article/6ee32b4e30e143dcae3aa90db8059583
Autor:
Shenglan Ni, Zhizhi Chen, Chenkai Hu, Houpeng Chen, Qian Wang, Xi Li, Sannian Song, Zhitang Song
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1594 (2022)
A novel output-capacitorless low-dropout regulator (OCL-LDO) with an embedded slew-rate-enhancement (SRE) circuit is presented in this paper. The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power
Externí odkaz:
https://doaj.org/article/0f8d6cc8536347c082a7b22327d15e7c
Publikováno v:
IEEE Transactions on Electron Devices. 70:493-498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5c3e6a2f5acd47d1e6b5c5a171339e
https://doi.org/10.1109/ted.2022.3232080
https://doi.org/10.1109/ted.2022.3232080
Publikováno v:
IEEE Transactions on Electron Devices. 69:5536-5541
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef6ec7f78f8a657c9d76b06faa34ce42
https://doi.org/10.1109/ted.2022.3200347
https://doi.org/10.1109/ted.2022.3200347
Publikováno v:
Energies, Vol 14, Iss 21, p 7193 (2021)
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By
Externí odkaz:
https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5
Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1085 (2021)
Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ens
Externí odkaz:
https://doaj.org/article/2b64ddecc23d44eea184a24bc6d99322
Publikováno v:
Micromachines, Vol 12, Iss 10, p 1183 (2021)
Computing-In-Memory (CIM), based on non-von Neumann architecture, has lately received significant attention due to its lower overhead in delay and higher energy efficiency in convolutional and fully-connected neural network computing. Growing works h
Externí odkaz:
https://doaj.org/article/94e7719234fa43afaee733f62d48c9a8