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pro vyhledávání: '"Houng-Wei Chen"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 271-277 (2021)
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature p
Externí odkaz:
https://doaj.org/article/ff7f8d2cf84c496fbeee9a42c25396bc
Autor:
Houng-Wei Chen, 陳泓偉
102
The study demonstrated liquid phase oxidation (LPO) on device isolation of InGaAs/InAlAs metamorphic high-electron-mobility transistor (MHEMT). The fabrication of conventional field effect transistors exist a gate leakage current due to the
The study demonstrated liquid phase oxidation (LPO) on device isolation of InGaAs/InAlAs metamorphic high-electron-mobility transistor (MHEMT). The fabrication of conventional field effect transistors exist a gate leakage current due to the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/52m3p3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 271-277 (2021)
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32757b6a865164bf35e2f57f9a4d62b7
https://doi.org/10.1109/jeds.2021.3054399
https://doi.org/10.1109/jeds.2021.3054399