Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Hou Kuei Huang"'
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
The temperature-dependent optical, electrical, and thermal properties of flip-chip light emitting diodes (FCLEDs) with diamond-like carbon (DLC) heat-spreading layers were investigated. On the basis of the measured results in the 20°C to 100°C temp
Externí odkaz:
https://doaj.org/article/2c01fd99fe0f49579d9399ba77af0da7
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 6:1615-1619
Removal of the heat crowding phenomenon in flip-chip light-emitting diodes (FCLEDs) with diamond-like carbon (DLC) heat-spreading layers on a ceramic submount is investigated. The wetting area of the chip and ceramic submount is critical for the die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e01ce727ed4aaa138701cd4ecf82b72
https://doi.org/10.1109/tcpmt.2016.2611942
https://doi.org/10.1109/tcpmt.2016.2611942
Publikováno v:
Journal of Display Technology. 12:357-361
The thermal properties of a flip-chip light-emitting diode (FCLED) chip-on-board (COB) with diamond-like carbon (DLC) heat-spreading layers are investigated. The temperature-dependent performance of the COB packages with and without DLC heat-spreadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28d617b3a032eb9e47c18fac50d50c6
https://doi.org/10.1109/jdt.2015.2491934
https://doi.org/10.1109/jdt.2015.2491934
Publikováno v:
Microelectronics Reliability. 46:2025-2031
The behavior of Schottky gate characteristics before and after hot-electron stress has been a relatively neglected topic. Thus, this paper discussed the effects of hot-electron accelerated stress on the DC characteristics of AlGaAs/InGaAs/GaAs PHEMTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5a18464991f5068732bc68d72d0a84
https://doi.org/10.1016/j.microrel.2006.02.013
https://doi.org/10.1016/j.microrel.2006.02.013
Publikováno v:
Microelectronics Reliability. 46:2038-2043
A newly proposed method, called the current-dependent hot-electron stress, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltages. The impact ionization between gate and drain is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc3ae38922c4e23ba0f79d379a9f089
https://doi.org/10.1016/j.microrel.2006.02.014
https://doi.org/10.1016/j.microrel.2006.02.014
Autor:
Che-Hung Lin, Jui Chieh Chiu, Chian Sern Chang, Yeong-Her Wang, Hong Zhi Liu, Chang Luen Wu, Chuan Chien Hsu, Chen Kuo Chu, Hou Kuei Huang
Publikováno v:
Microwave and Optical Technology Letters. 49:257-261
This paper presents a compact X-band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate-length power PHEMT technology, a two-stage power amplif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff950f88afdc25eefaa424bd88d7c5e
https://doi.org/10.1002/mop.22102
https://doi.org/10.1002/mop.22102
Autor:
Chang-Luen Wu, Chou-Sheng Wang, Chieh-Ping Chang, Hou-Kuei Huang, Yeong-Her Wang, Chian-Sern Chang
Publikováno v:
IEEE Transactions on Electron Devices. 52:1706-1712
The degradation mechanisms of the noise characteristics of InGaP-gated low-noise pseudomorphic high-electron mobility transistors (PHEMTs) under accelerated stresses through dc and thermal stresses are investigated. The devices used were metal-organi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4e639216d5d37d6b6cb185b56d293bb
https://doi.org/10.1109/ted.2005.852176
https://doi.org/10.1109/ted.2005.852176
Autor:
null Hong-Zhi Liu, null Hou-Kuei Huang, null Chih-Cheng Wang, null Ray-Jay Chiu, null Che-Hung Lin, null Chen-Kuo Chu, null Mau-Phon Houng, null Yeong-Her Wang, null Ching-Hsueh Chang, null Chang-Luen Wu, null Chian-Sern Chang
Publikováno v:
IEEE Circuits and Devices Magazine. 21:12-17
We have successfully developed a simple and low-cost 1.9-GHz, 25-W power amplifier by using only one prematched 50-mm PHEMT with external matching circuits on a FR-4 PCB. As the output stage integrated with other driver stages and dc control circuits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5da9e0452cb3e71133ecb8d6187f6a3
https://doi.org/10.1109/mcd.2005.1492713
https://doi.org/10.1109/mcd.2005.1492713
Publikováno v:
IEEE Electron Device Letters. 34:1029-1031
Vertical light-emitting diodes (VLEDs) with diamondlike carbon/titanium (DLC/Ti) heat-spreading layers on silicon (Si) substrates are investigated. Good thermal conductivity coupled with a thermal expansion coefficient similar to that of gallium nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89d063a0df0db5237112fde64e0adc88
https://doi.org/10.1109/led.2013.2266670
https://doi.org/10.1109/led.2013.2266670
Publikováno v:
Solid-State Electronics. 48:1683-1686
A simple self-aligned process for GaAs Schottky diodes passivated by liquid phase chemical enhanced oxidation is demonstrated. In addition to the low temperature process, the passivated native oxide can further reduce the leakage current and enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a58f000d0421d50ca6f175672fccc6
https://doi.org/10.1016/j.sse.2004.03.003
https://doi.org/10.1016/j.sse.2004.03.003