Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hossein Bardareh"'
Publikováno v:
DSD
By decreasing transistors feature size in nanoscale technology, the effect of soft error on combinational circuits has become a challenging problem as the particle strikes may lead to not only single event transients (SETs) but also multiple event tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a726857b2b9c338d039191e6970d1a
https://doi.org/10.1109/dsd.2018.00052
https://doi.org/10.1109/dsd.2018.00052
Publikováno v:
IOLTS
Although RRAM as an emerging non-volatile memory has solved many dr awbacks of conventional memor ies, it has deficiencies needed to be maintained. The objective of this paper is to suppress the soft er ror susceptibility of CMOSbased peripheral read
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d13111fa74fb0a35ca84e9b63c3c7f2
https://doi.org/10.1109/iolts.2018.8474076
https://doi.org/10.1109/iolts.2018.8474076
Publikováno v:
NORCAS
Conventional memories face serious design challenges as process feature size of transistor shrinks to ultra-low sizes, hence the need for having an alternative for conventional memory technologies is inevitable. The cross-point architectures of resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2ad0f26e3461c2cc755ed0e2bbe6ac
https://doi.org/10.1109/norchip.2017.8124954
https://doi.org/10.1109/norchip.2017.8124954