Roadmap on emerging hardware and technology for machine learning.

Autor: Berggren K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Xia Q; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America., Likharev KK; Stony Brook University, Stony Brook, NY 11794, Unites States., Strukov DB; Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, United States of America., Jiang H; School of Engineering & Applied Science Yale University, CT, United States of America., Mikolajick T; NaMLab gGmbH and TU Dresden, Germany., Querlioz D; Université Paris-Saclay, CNRS, France., Salinga M; Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Germany., Erickson JR; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America., Pi S; Lam Research, Fremont, CA, United States of America., Xiong F; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America., Lin P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Li C; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, China., Chen Y; School of information science and technology, Fudan University, Shanghai, People's Republic of China., Xiong S; School of information science and technology, Fudan University, Shanghai, People's Republic of China., Hoskins BD; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Daniels MW; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Madhavan A; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States of America., Liddle JA; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., McClelland JJ; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America., Yang Y; School of Electronics Engineering and Computer Science, Peking University, Beijing, People's Republic of China., Rupp J; Department of Materials Science and Engineering and Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.; Electrochemical Materials, ETHZ Department of Materials, Hönggerbergring 64, Zürich 8093, Switzerland., Nonnenmann SS; Department of Mechanical & Industrial Engineering, University of Massachusetts-Amherst, MA, United States of America., Cheng KT; School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China., Gong N; IBM T J Watson Research Center, Yorktown Heights, NY 10598, United States of America., Lastras-Montaño MA; Instituto de Investigación en Comunicación Óptica, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, México., Talin AA; Sandia National Laboratories, Livermore, CA 94551, United States of America., Salleo A; Department of Materials Science and Engineering, Stanford University, Stanford, California, United States of America., Shastri BJ; Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston ON KL7 3N6, Canada., de Lima TF; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America., Prucnal P; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America., Tait AN; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America., Shen Y; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America., Meng H; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America., Roques-Carmes C; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America., Cheng Z; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China., Bhaskaran H; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom., Jariwala D; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia PA 19104, United States of America., Wang H; University of Southern California, Los Angeles, CA 90089, United States of America., Shainline JM; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America., Segall K; Department of Physics and Astronomy, Colgate University, NY 13346, United States of America., Yang JJ; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America., Roy K; School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America., Datta S; University of Notre Dame, Notre Dame, IN 46556, United States of America., Raychowdhury A; Georgia Institute of Technology, Atlanta, GA 30332, United States of America.

Publikováno v: Nanotechnology [Nanotechnology] 2021 Jan 01; Vol. 32 (1), pp. 012002.

Room Temperature Skyrmions in Strain-Engineered FeGe thin films.

Autor: Budhathoki S; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Sapkota A; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Law KM; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Ranjit S; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Nepal B; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Hoskins BD; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A., Thind AS; Institute of Materials Science Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130, U.S.A., Borisevich AY; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A., Jamer ME; Physics Department, United States Naval Academy, Annapolis, MD 21402, U.S.A., Anderson TJ; Naval Research Laboratory, Washington, DC 20375, U.S.A., Koehler AD; Naval Research Laboratory, Washington, DC 20375, U.S.A., Hobart KD; Naval Research Laboratory, Washington, DC 20375, U.S.A., Stephen GM; Physics Department, Northeastern University, Boston, MA 02115, U.S.A., Heiman D; Physics Department, Northeastern University, Boston, MA 02115, U.S.A., Mewes T; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A., Mishra R; Institute of Materials Science Engineering, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130, U.S.A.; Department of Mechanical Engineering Materials Science, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130, U.S.A., Gallagher JC; U.S. Naval Research Laboratory, Washington, DC 20375, U.S.A., Hauser AJ; Department of Physics and Astronomy, University of Alabama, Tuscaloosa AL 35487, U.S.A.

Publikováno v: Physical review. B [Phys Rev B] 2020 Jun; Vol. 101 (22).

Streaming Batch Eigenupdates for Hardware Neural Networks.

Autor: Hoskins BD; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States., Daniels MW; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States., Huang S; Electrical and Computer Engineering, George Washington University, Washington, DC, United States., Madhavan A; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States., Adam GC; Electrical and Computer Engineering, George Washington University, Washington, DC, United States., Zhitenev N; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States., McClelland JJ; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States., Stiles MD; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States.

Publikováno v: Frontiers in neuroscience [Front Neurosci] 2019 Aug 06; Vol. 13, pp. 793. Date of Electronic Publication: 2019 Aug 06 (Print Publication: 2019).

Publisher Correction: Stateful characterization of resistive switching TiO 2 with electron beam induced currents.

Autor: Hoskins BD; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. brian.hoskins@nist.gov.; Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA. brian.hoskins@nist.gov., Adam GC; Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.; Institute for Research and Development in Microtechnologies, 077190, Bucharest, Romania., Strelcov E; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA., Zhitenev N; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Kolmakov A; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Strukov DB; Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA., McClelland JJ; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Publikováno v: Nature communications [Nat Commun] 2018 Jan 24; Vol. 9 (1), pp. 413. Date of Electronic Publication: 2018 Jan 24.

Stateful characterization of resistive switching TiO 2 with electron beam induced currents.

Autor: Hoskins BD; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA. brian.hoskins@nist.gov.; Materials Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA. brian.hoskins@nist.gov., Adam GC; Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.; Institute for Research and Development in Microtechnologies, 077190, Bucharest, Romania., Strelcov E; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA., Zhitenev N; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Kolmakov A; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA., Strukov DB; Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA., McClelland JJ; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.

Publikováno v: Nature communications [Nat Commun] 2017 Dec 07; Vol. 8 (1), pp. 1972. Date of Electronic Publication: 2017 Dec 07.