Výsledky vyhledávání - "Hoshi, Yusuke"

Report

Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-time-scale pump-and-probe spectroscopy

Autor: Kuroda, Takashi, Hoshi, Yusuke, Masubuchi, Satoru, Okada, Mitsuhiro, Kitaura, Ryo, Watanabe, Kenji, Taniguchi, Takashi, Machida, Tomoki

Publikováno v: Phys. Rev. B 102, 195407 (2020); open access

The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass mome

Externí odkaz: http://arxiv.org/abs/2010.10701

Zobrazit plný text záznamu

Akademický článek

Strong room-temperature EL emission from Ge-on-Si (1 1 1) diodes

Autor: Sugiura, Yuwa, Sasaki, Masashi, Wagatsuma, Youya, Yamada, Koudai, Hoshi, Yusuke, Yamada, Michihiro, Hamaya, Kohei, Sawano, Kentarou

Publikováno v: In Journal of Crystal Growth 15 September 2022 594

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Report

Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

Autor: Moriya, Rai, Sawano, Kentarou, Hoshi, Yusuke, Masubuchi, Satoru, Shiraki, Yasuhiro, Wild, Andreas, Neumann, Christian, Abstreiter, Gerhard, Bougeard, Dominique, Koga, Takaaki, Machida, Tomoki

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, rev

Externí odkaz: http://arxiv.org/abs/1408.1148

Zobrazit plný text záznamu