Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Hosang Yoon"'
Publikováno v:
Nuclear Engineering and Technology, Vol 56, Iss 8, Pp 2916-2922 (2024)
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM c
Externí odkaz:
https://doaj.org/article/df52b849542f47ba986ec1191bca6be6
Publikováno v:
Journal of the Korean Society for Railway. 26:149-165
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24581c0a734a367ff8e93c3c21e03508
https://doi.org/10.7782/jksr.2023.26.3.149
https://doi.org/10.7782/jksr.2023.26.3.149
Publikováno v:
The Journal of The Korea Institute of Intelligent Transport Systems. 20:1-17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e62b1aabdc0e5ff2f3febe8d548064
https://doi.org/10.12815/kits.2021.20.5.1
https://doi.org/10.12815/kits.2021.20.5.1
Publikováno v:
Journal of the Korean Physical Society. 75:1021-1027
Dielectrophoresis (DEP) force is a widely studied topic because it has high utility in various research areas. Understanding DEP force is significant from the point of view of its efficient usage. Here, we confirmed the directions and magnitudes of D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77de87b0a768d841f59507738ae76137
https://doi.org/10.3938/jkps.75.1021
https://doi.org/10.3938/jkps.75.1021
Autor:
Jin-Hyun Kim, Eojin Lee, O Seongil, Kyomin Sohn, Hyun-Sung Shin, Shin-haeng Kang, Seung-Woo Seo, Hyeon-Su Kim, Nam Sung Kim, Jae-Hoon Lee, Anand Iyer, Seung-Won Lee, Hosang Yoon, Wang David T, Sukhan Lee, Kyoung-Hwan Lim
Publikováno v:
ISCA
Emerging applications such as deep neural network demand high off-chip memory bandwidth. However, under stringent physical constraints of chip packages and system boards, it becomes very expensive to further increase the bandwidth of off-chip memory.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2804d162ad566ed49124cb5e302217
https://doi.org/10.1109/isca52012.2021.00013
https://doi.org/10.1109/isca52012.2021.00013
Autor:
Keundong, Lee, Jong-Woo, Park, Youngbin, Tchoe, Jiyoung, Yoon, Kunook, Chung, Hosang, Yoon, Sangik, Lee, Chansoo, Yoon, Bae, Ho Park, Gyu-Chul, Yi
Publikováno v:
Nanotechnology. 28(20)
We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a327f3097c98f99dafff94dd7a487060
https://pubmed.ncbi.nlm.nih.gov/28303797
https://pubmed.ncbi.nlm.nih.gov/28303797
Autor:
Bae Ho Park, Gyu-Chul Yi, Sangik Lee, Kunook Chung, Youngbin Tchoe, Chansoo Yoon, Keundong Lee, Hosang Yoon, Hyeonjun Baek
Publikováno v:
Scientific Reports
SCIENTIFIC REPORTS(6)
SCIENTIFIC REPORTS(6)
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in ‘reading’ and ‘writing’ operations. To enhance t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110875e0da15d8efdff2108363977c93
http://europepmc.org/articles/PMC4895219
http://europepmc.org/articles/PMC4895219
High-resolution parallel multipass laser interferometer with an interference fringe spacing of 15 nm
Publikováno v:
Optics Communications. 284:1118-1122
We present a high-resolution laser interferometer based on the parallel multipass configuration with a pair of right-angle prisms to increase the optical fringe subdivision order up to 21. In the experiment, a multipass homodyne Michelson interferome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92337fcf7b23ef1b951706e53a379dd
https://doi.org/10.1016/j.optcom.2010.10.073
https://doi.org/10.1016/j.optcom.2010.10.073
Autor:
Hosang Yoon, Gyu-Chul Yi
In this chapter, we present a review of recent research activities related to position-controlled selective growth of ZnO one-dimensional nanostructures and their heterostructures for various device applications. The main text of this chapter is orga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83084885a4dfaa19775dabeae36140fe
https://doi.org/10.1016/bs.semsem.2015.07.004
https://doi.org/10.1016/bs.semsem.2015.07.004
Autor:
Bae Ho Park, Kunook Chung, Jiyoung Yoon, Sangik Lee, Gyu-Chul Yi, Keundong Lee, Jong-woo Park, Chansoo Yoon, Youngbin Tchoe, Hosang Yoon
Publikováno v:
Nanotechnology. 28:205202
We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiO x /GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ffd3cd52b41ac819787769f32967bab
https://doi.org/10.1088/1361-6528/aa6763
https://doi.org/10.1088/1361-6528/aa6763