Electrical behaviour of lateral Al/n-GaN/Al structures

Autor: Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

Publikováno v: In Applied Surface Science 2010 256(18):5614-5617

Domination of the thermionic-field emission in the reverse I-V characteristics of n-type GaAs Schottky contacts.

Autor: Horváth, Zs. J.

Publikováno v: Journal of Applied Physics; 12/15/1988, Vol. 64 Issue 12, p6780, 5p

Investigation of CdS/InP heterojunction prepared by chemical bath

Autor: Rakovics V., Horváth Zs. J., Horváth Zs. E., Bársony I., Frigeri C., Besagni T.

Publikováno v: EXMATEC '06, 8th International Workshop on Expert Evaluation, Cádiz, 2006
info:cnr-pdr/source/autori:Rakovics V., Horváth Zs. J., Horváth Zs. E., Bársony I., Frigeri C., Besagni T./congresso_nome:EXMATEC '06, 8th International Workshop on Expert Evaluation/congresso_luogo:Cádiz/congresso_data:2006/anno:2006/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::b8a2e74712a13de76d6a16eb3b68d4ea
https://publications.cnr.it/doc/113932

Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes.

Autor: Horváth, Zs. J.

Publikováno v: Journal of Applied Physics; 12/1/1990, Vol. 68 Issue 11, p5899, 3p, 2 Graphs

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