Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hortenbach, H."'
Publikováno v:
In Applied Surface Science 15 November 2006 253(2):561-565
Autor:
Filonenko, O., Mogilatenko, A., Hortenbach, H., Allenstein, F., Beddies, G., Hinneberg, H.-J.
Publikováno v:
In Microelectronic Engineering October 2004 76(1-4):324-330
Publikováno v:
In Applied Surface Science 15 April 2004 227(1-4):341-348
Publikováno v:
In Journal of Crystal Growth 2004 262(1):281-286
Publikováno v:
In Microelectronic Engineering 2002 64(1):211-218
Publikováno v:
In Microelectronic Engineering 2002 64(1):157-162
Publikováno v:
In Microelectronic Engineering 2002 60(1):255-259
Autor:
Wündisch, C., Posselt, M., Schmidt, B., Heera, V., Mücklich, A., Skorupa, W., Clarysse, T., Simoen, E., Hortenbach, H.
Publikováno v:
Workshop Ionenstrahlphysik, 29.-31.03.2010, Dresden, Germany
In the past the lack of stable native germanium oxide for surface passivation and gate dielectrics as well as the inability to epitaxially grow sufficiently thick defect-free germanium layers on silicon hindered the integration of germanium into the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::92fc96480c558b156f06c8c67c07db0c
https://www.hzdr.de/publications/Publ-13966-1
https://www.hzdr.de/publications/Publ-13966-1
Autor:
Wündisch, C., Posselt, M., Schmidt, B., Mücklich, A., Skorupa, W., Clarysse, T., Simoen, E., Hortenbach, H.
Publikováno v:
Nordic semiconductor meeting, 14.-17.06.2009, Reykjavik, Island
Although the first transistor was made on germanium, most integrated circuits are fabricated using silicon substrates. The main reasons for the change from Ge to Si are the excellent physical properties of the SiO2/Si interface. Today SiO2 is more an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::8a40590b61c06b8b35114a2df2c749df
https://www.hzdr.de/publications/Publ-13306-1
https://www.hzdr.de/publications/Publ-13306-1
Autor:
Wündisch, C., Posselt, M., Anwand, W., Schmidt, B., Grötzschel, R., Mücklich, A., Skorupa, W., Simoen, E., Clarysse, T., Satta, A., Hortenbach, H., Möller, A., Pelzing, P.
Publikováno v:
E-MRS 2008 Spring Meeting, Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS, 26.-30.05.2008, Strasbourg, France
16th International Conference on Ion Beam Modification of Materials (IBMM 2008), 31.08.-05.09.2008, Dresden, Germany
16th International Conference on Ion Beam Modification of Materials (IBMM 2008), 31.08.-05.09.2008, Dresden, Germany
The increasing interest in Ge as a high mobility substrate has led to numerous investigations on shallow junction formation by ion beam processing. It has been shown that p+ doping yields junctions with the required properties whereas the formation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::483ebe80f50cc2037ce2ae6a5db3f58e
https://www.hzdr.de/publications/Publ-11374-1
https://www.hzdr.de/publications/Publ-11374-1