Zobrazeno 1 - 10
of 688
pro vyhledávání: '"Horst Zimmermann"'
Autor:
Christoph Ribisch, Michael Hofbauer, Kerstin Schneider-Hornstein, Alexander Kuttner, Martin Jungwirth, Horst Zimmermann
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-8 (2024)
A circuit to control heating resistors with a pulse-width modulated (PWM) signal for a photonic quantum simulator is introduced. The output voltage is switched on for a changeable specified time and switched off for the rest of the period. The length
Externí odkaz:
https://doaj.org/article/e1d3a683495c4f0caaa8819e5bb089f8
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 1, Pp 1-6 (2024)
This article presents a multi-dot PIN photodiode structure that addresses the inherent trade-off between the light-sensitive area and capacitance in conventional planar photodiodes commonly used in optical communication systems. This structure is a c
Externí odkaz:
https://doaj.org/article/59458ff3b9864fa080c73ce03263e6bb
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 6, Pp 1-8 (2023)
This work presents the application of Direct-Sequence Code-Division-Multiple-Access (DS-CDMA) to tackle the primary problem of simultaneous multi-access of a shared light channel in an indirect Time-of-Flight measurement system based on on-off-keyed
Externí odkaz:
https://doaj.org/article/131e73f4f44b447e89f9c58b845a2965
Autor:
Seyed Saman Kohneh Poushi, Christoph Gasser, Bernhard Goll, Michael Hofbauer, Kerstin Schneider-Hornstein, Horst Zimmermann
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-9 (2023)
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide absorption zone. The EFLC-APD possesses a hemispherical avalanching electric f
Externí odkaz:
https://doaj.org/article/ddbd856f70ad4ece87a73d760dace839
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-9 (2023)
A monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-μm CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has
Externí odkaz:
https://doaj.org/article/be495da02d5844f0a8d54bc6bd4ccca9
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 2, Pp 1-6 (2023)
Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 μm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the surface as
Externí odkaz:
https://doaj.org/article/d9bddab9919a4260970b9aae1fd0d334
Autor:
Christoph Ribisch, Michael Hofbauer, Seyed Saman Kohneh Poushi, Alexander Zimmer, Kerstin Schneider-Hornstein, Bernhard Goll, Horst Zimmermann
Publikováno v:
Sensors, Vol 23, Iss 24, p 9644 (2023)
A gating circuit for a photonic quantum simulator is introduced. The gating circuit uses a large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode (SPAD). Nine channels are monolithically implemented in an application
Externí odkaz:
https://doaj.org/article/42c5031092cb465793f33ad647689fa4
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 4, Pp 1-6 (2022)
This work describes the architecture and measured capabilities of an optical distance sensing application specific integrated circuit (ASIC) manufactured in 0.35 μm CMOS with a nominal supply voltage of 3.3 V for indirect time-of-flight. An integrat
Externí odkaz:
https://doaj.org/article/cd3b5200b9174261a81595de36ca88f4
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 2, Pp 1-8 (2022)
Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar transisto
Externí odkaz:
https://doaj.org/article/0921c1fd73a54a22954de7f05d3bf648
Publikováno v:
Sensors, Vol 23, Iss 5, p 2733 (2023)
The purpose of this work is to prove the suitability of integrated single-photon avalanche diode (SPAD)-based indirect time-of-flight (iTOF) for sub-100 µm precision depth sensing using a correlation approach with GHz modulation frequencies. For thi
Externí odkaz:
https://doaj.org/article/38297086948943e19cef8ec402451562