Zobrazeno 1 - 8 of 8 pro vyhledávání: '"Horst Sadowski"'
2
Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy
Autor: Horst Sadowski, Reinhard Helbig, Hans Heissenstein
Publikováno v: Physica B: Condensed Matter. 324:49-52
We have irradiated 4H- and 6H-silicon carbide (SiC) samples with neutrons with an energy distribution of a nuclear reactor. In this way we generated a phosphorus doping of ∼4×1015 cm−3. We chose 40 and 50 μm thick epitaxial layers with a nitrog
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::276c237ca4d733dc9960afca6520ffa0
https://doi.org/10.1016/s0921-4526(02)01268-1
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3
Defect correlated emmission and electrical properties of 4H- and 6H-SiC epitaxial layers doped by nuclear transmutation doping (NTD)
Autor: Reinhard Helbig, Horst Sadowski, Hans Heissenstein
Publikováno v: Physica B: Condensed Matter. :702-705
We have investigated 4H-SiC and 6H-SiC epitaxial layers after doping by nuclear transmutation doping (NTD). N-type layers on n-type substrates were characterized by low-temperature photoluminescence (LTPL) and p-type layers on p-type substrates with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87a01317baeb7e9826414f3c0d2fee38
https://doi.org/10.1016/s0921-4526(01)00874-2
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7
Electrochemical etching of silicon carbide
Autor: Stefan Rysy, Reinhard Helbig, Horst Sadowski
Publikováno v: Journal of Solid State Electrochemistry. 3:437-445
Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical v
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f296927d68d7e6d3a6914466621aff1
https://doi.org/10.1007/s100080050179
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